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Contextual Info: APTM50HM65FT3G Full - Bridge MOSFET Power Module Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 Features Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APT42F50B
Abstract: APT42F50S MIC4452 43A 013
Contextual Info: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT14F100B
Abstract: APT14F100S MIC4452
Contextual Info: APT14F100B APT14F100S 1000V, 14A, 0.98Ω Max, trr ≤240ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT8014L2FLL
Abstract: MAX7238
Contextual Info: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT17F80B
Abstract: APT17F80S MIC4452
Contextual Info: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT10026JFLL
Contextual Info: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30F50B
Abstract: APT30F50S MIC4452
Contextual Info: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT37F50S
Abstract: MIC4452 APT37F50B
Contextual Info: APT37F50B APT37F50S 500V, 37A, 0.15Ω Max, trr, ≤250ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT23F60B
Abstract: APT23F60S MIC4452
Contextual Info: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F50J
Abstract: MIC4452
Contextual Info: APT38F50J 500V, 38A, 0.10Ω Max, trr ≤280ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT15F50K
Abstract: MIC4452 half bridge converter
Contextual Info: APT15F50K 500V, 15A, 0.39Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT10086BVFR
Contextual Info: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT1201R2BFLL
Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
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APT12031JFLL
Abstract: APT12031JLL
Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8015JVFR
Abstract: APT8015
Contextual Info: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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7106
Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
Contextual Info: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8024JFLL
Contextual Info: APT8024JFLL 800V 29A 0.240Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8075BVFR
Contextual Info: APT8075BVFR Ω 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8052BFLL
Abstract: APT8052SFLL
Contextual Info: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8018L2VFR
Contextual Info: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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ht 25 transistor
Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK637-400B
Contextual Info: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable
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FREDFET
Contextual Info: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT29F100B2
Abstract: APT29F100L MIC4452
Contextual Info: APT29F100B2 APT29F100L 1000V, 29A, 0.46Ω Max, trr ≤270ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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