260NS Search Results

Contextual Info: Memory Module Specifications KHX16C10B1B/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)

Contextual Info: Memory Module Specifications KHX13C9B1/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power

Contextual Info: KHX18C10/4 4GB 512M x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.480 W*

Contextual Info: KHX18C10/8 8GB 1G x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.924 W*

Contextual Info: Memory Module Specifications KHX16C9K2/16 16GB 8GB 1G x 64-Bit x 2 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)

Contextual Info: KHX1600C9D3LK2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3L-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power

Contextual Info: Memory Module Specifications KHX16C10B1R/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)

Contextual Info: KHX18C10T2K2/8 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1866 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power

km41256 dram

Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
Contextual Info: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A

DDR3 DIMM SPD JEDEC

Abstract: DDR3 SPD DDR3 1600 spd
Contextual Info: Memory Module Specifications KHX1600C10D3B1K2/16G 16G 8GB 2Rx8 1G x 64-Bit x 2 pcs. DDR3-1600 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)

Contextual Info: Memory Module Specifications KHX13C9B1B/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power

Multiplexer Switches

Contextual Info: MULTIPLEXER/SWITCHES SELECTION GUIDE Multiplexers NUMBER OF CHANNELS R on TURN-ON TIME SUPPLY VOLTAGE DIGITAL I/O LTC 1390 8 45n 260ns +3 —» ±5 Serial Bi-directional LTC1391 8 45Q 260ns +3 DE-MUX Yes FEATURES Precision Low Power, Break-Before-M ake 3-W ire

CEER117

Contextual Info: Datasheet 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage BM60051FV-C General Description Key Specifications The BM60051FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 260ns, minimum input pulse width of 180ns, and incorporates the fault

ddr3 1600 timing

Abstract: 1600 CL9 SPD data
Contextual Info: Memory Module Specifications KHX16C9/8 8GB 1G x 64-Bit DDR3-1600 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power

APT42F50B

Abstract: APT42F50S MIC4452 43A 013
Contextual Info: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT22F80B

Abstract: APT22F80S MIC4452 two switch forward converter
Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

MN41256-12

Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
Contextual Info: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM

S27121

Abstract: HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature
Contextual Info: T A R G E T S P E C IF IC A T IO N *M040 HB561009A-12, H B561009A-15, H B561009A-20 P re lim in a ry MARCH, 1986 <§> H IT A C H I 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access

Contextual Info: ADS1255 ADS1256 SBAS288E − JUNE 2003 − REVISED APRIL 2005 Very Low Noise, 24ĆBit AnalogĆtoĆDigital Converter FEATURES D 24 Bits, No Missing Codes DESCRIPTION The ADS1255 and ADS1256 are extremely low-noise, 24-bit analog-to-digital A/D converters. They provide

MN4264

Abstract: kzz 72 JVC 0J DD01 MN-4264
Contextual Info: . PANASONIC INDL/ELEK -CIO 72 P A N A S O N IC IN D L , E L E C T R O N IC EEÌ t3ci 3 2 ñ S 2 O Oü t . 3 1 5 . - 3 | . 6932852 ^ E U '" 72C 0Ò315 DJ - Ÿ f - ? ? - / 7 ^ . MN4264 6 5 , 5 3 6 \£ y N M O S £ * - i •? i y ? R A M 6 5 , 5 3 6 - B i t N M O S Dynamic RAM

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

100 kilo ohms resistor specifications

Abstract: PCA96XX PCA9306 69RC BAT54A LPC932 P82B96 PCA9600 PCA9633 PCA9665
Contextual Info: I2C Maximum Clock Speed Calculator Mar 2009 BLSIC/BU MMS NXP semiconductors I2C-Bus Maximum Clock Speed Calculator Excel file of Calculator > Double click to open. If this is a PDF then go to URL

Contextual Info: bq2004 BENCHMARQ Fast-Charge IC Features General Description >• F ast charge a n d conditioning of nickel cadm ium or nickel-m etal hydride batteries The bq2004 F ast C harge IC provides co m p reh en siv e fa s t charge control functions to g eth er w ith high-speed

Contextual Info: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func­ tions together with high-speed switch­