KM41256 Search Results

km41256 dram

Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
Contextual Info: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

se 145

Abstract: km41256 dram
Contextual Info: KM M48256/KM M48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM FEATURES GENERAL DESCRIPTION • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc ÍRC KMM48256/7-12 120ns 60ns 230ns

KMM58256-12

Contextual Info: MEMORY MODULES KMM48256/KMM58256 256K X 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 X 8-bit Organization • Performance range: The S am sung KM M 48256 and KMM58256 are 256K x 8 dyn am ic RAM high d e nsity m em ory m odules.

odq1

Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7Tfcj 4145 0 0 0 Ô 2 D ? KM M48256/KM M58256 7 MEMORY MODULES 256K x8 Bit DRAM SIP and SIMM Memory Modules T-46,'23-ft FEATURES GENERAL DESCRIPTION • 262,144 x 8-bit Organization • Performance range: The Samsung KMM48256 and KMM58256 are

Contextual Info: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

KMM59256-12

Abstract: KMM59256 KMM49256 M492
Contextual Info: SAMSUNG SEMICONDUCTOR INC ?= ib m 4a o o o a a is t 53E D • MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization • N inth device has separate D, Q and CAS or Parity

"speech synthesis" parcor

Abstract: "speech synthesis" lpc
Contextual Info: SPEECH SYNTHESIZER SPEECH SYNTHESIZER DEVICES Many different approaches have been used for syn­ thesizing speech signals. Generally, all these methods employ some form of pattern matching. At first, the input utterances are filtered and digitized. The extracts

KMM49256

Contextual Info: MEMORY MODULES KMM49256/KMM59256 2 5 6 K x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 262,144 x 9-bit Organization _ • Ninth device has separate 0 , Q and CAS for Parity applications. • Performance range: The S am sung KMM49256 and KMM59256 is 256K x 9

KM41256-15

Abstract: KM41256-12 LH21256-15 LH21256-12 HM50257P-15 d2578 datasheet HM50257 HM50257-20 HY53C256-80 lh21256
Contextual Info: 183 - 256K m « tt £ ¿ s ig ila CC A 4 TRAC max ns) TRCY TCAD lin min (ns) (ns) nMOS / f- ^ / TAH min (ns) D y n a m i c R AM (2 6 2 1 4 4 x 1) f t tt « TP min (ns) TtCY min (ns) TDH rain (ns) TRWC min (ns) VDD or V C C (V) A M I DD max (mA) IDD STANDBY

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

KM41256

Abstract: 30 pin SIP dram memory 256KX8 SIMM
Contextual Info: KMM48256/KMM48257 KM M58256/KM M58257 MEMORY MODULES 2 5 6 K x 8 Bit DRAM Memory Modules SIP/SIMM GENERAL DESCRIPTION FEATURES • 262,144 x 8-bit Organization • Performance range: • • • • • • • tRAC tcAc Í rc K M M48256/7-12 120ns 60ns 230ns

KMM59256-12

Abstract: KMM59256 KMM49257-12
Contextual Info: S A M S U N G S E M I C O N D U C T O R INC I>Ejj| 7 ^ b 4 1 M 5 OGDSSlfl KMM49256/KMM49257 ’ KMM59256/KMM59257 ^ 1 1 1 ' MEMORY MODULES 2 5 6 K x 9 Bit DRAM Memory Modules SIP/SIMM FEATURES GENERAL DESCRIPTION • 262,144 x 9-blt Organization • Ninth device has separate D,Q and CSS for Parity