195NS Search Results

18x16 barrel shifter

Abstract: DSP3210 320c10 cmpo3 18*16 barrel shifter design DSP320C10 tsc9
Contextual Info: £ D S C 320C 14 Microchip Digital Signal Controller FEATURES • 160 ns instruction cycle tim e at 25.6 MHz. A 20.5 MHz 195ns version is also available • 4K x 16 on chip program RAM • 256 x 16 on chip data RAM • Double precision 32 bit ALU/accumulator

2SK1263

Abstract: SC-65 2SK126
Contextual Info: Power F-MOS FET 2SK1263 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions •Features • • • • Low ON resistance R d s on : R Ds (on) 1 = 0.04ft (typ.) High switching rate : t(= 195ns (typ.) No secondary breakdown High breakdown voltage

2SK1263

Abstract: 2SK12 SC-65
Contextual Info: Power F-MOS FET 2SK12Ó3 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON re s is ta n c e R ds on : R DS (on) l = 0 .0 4 f t (ty p .) Unit: mm • H igh sw itch in g r a t e : t i = 195ns (ty p .) 15,5max. • N o se c o n d a ry b re a k d o w n

Contextual Info: HV9906 HV9606 t o Ki Dem lable Avai Current-Mode PWM Controller with Supervisor Features General Description ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ The HV9606 PWM controller allows the design of high efficiency >90% power supplies for distributed board mounted power

encoder 74175

Abstract: MV3506 MV3507A PCM encoder circuit DG22 DG28 MV3507 74175 chip digital telephone 600/IN5400+712
Contextual Info: MV3506/3507/3507A — CMOS MV3506 A-LAW CODEC WITH FILTER MV3507 /y-LAW CODEC WITH FILTER MV3507A //-LAW CODEC WITH FILTER AND A/B T h e M V 3506 and M V3507 are s ilic o n gate C M O S C o m p a n d in g E n c o d e r/D e c o d e r in te g ra te d c irc u its de s ig n e d

Contextual Info: OPA835 OPA2835 SLOS713D – JANUARY 2011 – REVISED OCTOBER 2011 www.ti.com Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp Check for Samples: OPA835, OPA2835 FEATURES DESCRIPTION • Fabricated using the industry-leading BiCom-3x SiGe complimentary bipolar process, the OPA835

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 2GB With 128Mx8 CL4 TS256MLQ64V5U Description Placement The TS256MLQ64V5U is a 256M x 64bits DDR2-533 Unbuffered DIMM. The TS256MLQ64V5U consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

FREDFET

Contextual Info: APT4F120S 1200V, 4A, 4.2Ω Max Trr ≤195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: OPA835 OPA2835 SLOS713D – JANUARY 2011 – REVISED OCTOBER 2011 www.ti.com Ultra Low-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp Check for Samples: OPA835, OPA2835 FEATURES DESCRIPTION • Fabricated using the industry-leading BiCom-3x SiGe complimentary bipolar process, the OPA835

Contextual Info: HV9606 Initial Release HV9606 Current-Mode PWM Controller with Supervisor Features General Description ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! The HV9606 PWM controller allows the design of high efficiency >90% power supplies for distributed board mounted power (BMP)

Contextual Info: LCD MODULE SPECIFICATION Model : MLCM4162B - - - Revision - Ü5 Engineering Date 2003 Our Preference 4904 7g 10 B M ODE OF D ISPLAY Display m ode □ TN positive □ TN negative STN : □ Yellow green □ Grey □ Blue negative □ FSTN positive □ FSTN negative

2SK1326

Abstract: 2sk1321 2SK1323 1A 30V MOS 2SK1325 2SK1327 K1308 2SK1319 2SK1311 2SK1301
Contextual Info: - 96 - € tt ffl £ j£ m "Æ i f m 1 m \> m, P d/P c h m K fe V* V) * ft * (V) * (A) * (w> Ig s s (max) (A) Vg s (V) % W (Ta=25°C) tï ft (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) gm (min) (typ) V d s (S) (S) (V) Id (A) Id (A) 2SK1301

Contextual Info: LTM4601/LTM4601-1 12A µModule Regulators with PLL, Output Tracking and Margining DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 12A DC Typical, 14A Peak Output Current 0.6V to 5V Output Voltage

KVR800D2N5

Abstract: kvr800d2n6 4096MB memory 8G kvr800d2n6k2 kvr800d2n
Contextual Info: Memory Module Specification KVR800D2N6K2/8G 8GB 4GB 512M x 64-Bit x 2 pcs. DDR2-800 CL6 240-Pin DIMM Kit DESCRIPTION: ValueRAM's KVR800D2N5K2/8G is a kit of two 512M x 64-bit 4GB (4096MB) DDR2-800 CL6 SDRAM (Synchronous DRAM) memory modules. Total kit capacity it 8GB (8192MB).

p 8123 transistor

Abstract: HFA5251 HFA5251Y
Contextual Info: HFA5251 S E M I C O N D U C T O R 800MHz Monolithic Pin Driver November 1996 Features Description • High Digital Data Rate . . . . . . . . . . . . . . . . . . . . 800MHz The HFA5251 is a very high speed monolithic pin driver solution for high performance test systems. The device will

LTM4608

Contextual Info: LTM4601A/LTM4601A-1 12A µModule Regulators with PLL, Output Tracking and Margining DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 12A DC Typical, 14A Peak Output Current 0.6V to 5V Output Voltage

425o

Contextual Info: Issued March 1997 232-5840 Data Pack F LED back-lit alphanumeric dot matrix liquid crystal display Data Sheet RS stock numbers 564-273 to 564-380 and 184-8588, 184-8594, 184-8825, 184-8847 Intelligent, alphanumeric, dot matrix modules with integral CMOS controller and driver ICs. The modules

samsung lcd module 40x4

Abstract: CV4404A Samsung KS0066 yamaha ic KS0066 40x4 lcd
Contextual Info: CLOVER CHINA DISPLAY SHENZHEN LTD. 高 華 電 子 顯 示 (深 圳 )有 限 公 司 LCD MODULE SPECIFICATION Model : CV4404A - _ _ - _ _ - _ _ - _ 工廠: 郵編: 電話: 電郵: 網 址: Revision 02 Engineering Date Yamaha Yam 2003 年 9 月 29 日 Our Reference

CV4161H

Abstract: Samsung KS0066 Clover lcd 16 KS0066 led Glass 16X1 16 pin diagram of lcd display 16x1 date code body marking samsung x360 clover display 14 pin diagram of lcd display 16x1
Contextual Info: CLOVER CHINA DISPLAY SHENZHEN LTD. 高華電子顯示(深圳)有限公司 LCD MODULE SPECIFICATION Model : CV4161H - _ _ - _ _ - _ _ - _ 工廠: 郵編: 電話: 電郵: 網址 : Revision 04 Engineering Date Brian Leung 2003 年 7 月 21 日 Our Reference

Contextual Info: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: SG5721G4FG8P0UU April 30, 2009 Ordering Information Part Numbers Description Module Speed SG5721G4FG8P0DB 1Gx72 8GB , DDR2, 240-pin DIMM, Registered, Parity, ECC, 512Mx4 Based, DDR2-400-333, 30.00mm, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0 SG5721G4FG8P0DG

SG5721G4AG8P0KF1

Contextual Info: SG5721G4AG8P0UU1 December 16, 2008 Ordering Information Part Numbers Description Module Speed SG5721G4AG8P0DB1 1Gx72 8GB , DDR2, 240-pin DIMM, Registered, Parity, ECC, VLP, CoolFlex, 512Mx4 Based, DDR2-400-333, 18.75mm, 22Ω DQ termination, Green Module (RoHS Compliant).

e1240

Abstract: EBE81FF4ABHT 1024M DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE81FF4ABHT Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 2 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with sFBGA • Package  240-pin fully buffered, socket type dual in line

OPA2835-DIE

Contextual Info: OPA2835-DIE www.ti.com SLOS826 – JANUARY 2013 ULTRA LOW-POWER, RAIL-TO-RAIL OUT, NEGATIVE RAIL IN, VFB OP AMP Check for Samples: OPA2835-DIE FEATURES 1 • • • • • • • • • APPLICATIONS Ultra Low Power – Quiescent Current: 250 µA typ