SI4884DY Search Results

S99-041

Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S

Si4884DY

Abstract: Si4884DY-T1
Contextual Info: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY

Si4884BDY-T1-E3

Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504
Contextual Info: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)

Si4884DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS

Si4884DY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS

Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S

si4884dy

Contextual Info: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S

SI4884DY

Contextual Info: SPICE Device Model SI4884DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

Si4884DY

Abstract: SOIC-16
Contextual Info: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

Si4884DY

Contextual Info: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4884DY

Abstract: Si4884DY-T1
Contextual Info: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY

F011

Abstract: F63TNR F852 L86Z Si4884DY SOIC-16 ECT 1C
Contextual Info: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

Si4884DY

Abstract: Si4884DY-T1
Contextual Info: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY

Contextual Info: MIC9130 Micrel MIC9130 High-Voltage, High-Speed Telecom DC-to-DC Controller Preliminary Information General Description Features The MIC9130 is a current-mode PWM controller that efficiently converts –48V telecom voltages to logic levels. The MIC9130 features a high voltage start-up circuit that allows

Contextual Info: HV9906 HV9606 t o Ki Dem lable Avai Current-Mode PWM Controller with Supervisor Features General Description ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ The HV9606 PWM controller allows the design of high efficiency >90% power supplies for distributed board mounted power

7.3*4.3*2.8mm

Abstract: VJ1206A102 VJ1206A102k LM2727 LM2737 MTC14 Si4826DY SLF12575T-1R2N8R2 TDK MLCC 1206 100uF LM27x7
Contextual Info: LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages General Description Features The LM2727 and LM2737 are high-speed, synchronous, switching regulator controllers. They are intended to control currents of 0.7A to 20A with up to 95% conversion efficiencies. The LM2727 employs output over-voltage and undervoltage latch-off. For applications where latch-off is not desired, the LM2737 can be used. Power up and down

Contextual Info: HV9606 Initial Release HV9606 Current-Mode PWM Controller with Supervisor Features General Description ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! The HV9606 PWM controller allows the design of high efficiency >90% power supplies for distributed board mounted power (BMP)

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

dc e2h

Abstract: sot 23 marking code c14 B340A LTC1699 LTC1699-80 LTC1699-81 LTC1699-82 LTC1778 81E TRANSISTOR Si4884DY
Contextual Info: LTC1699 Series SMBus VID Voltage Programmers U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ Fully Compliant with Intel 5-Bit Mobile LTC1699-80 and Desktop VRM8.4 (LTC1699-81) and VRM9.0 (LTC1699-82) VID Specifications Precision ±0.35% Programmable Resistor Divider

Contextual Info: LTC3872 No RSENSE Current Mode Boost DC/DC Controller FEATURES n n n n n n n n n n DESCRIPTION No Current Sense Resistor Required VOUT up to 60V Constant Frequency 550kHz Operation Internal Soft-Start and Optional External Soft-Start Adjustable Current Limit

8205 mosfet

Abstract: DT 8210 IC Amp. mosfet 1000 watt p 818 opto P-Channel Depletion Mosfets single phase transformer design MIC9130 depletion MOSFET n mosfet depletion 1A sink Si4800DY
Contextual Info: MIC9130 Micrel, Inc. MIC9130 High-Voltage, High-Speed Telecom DC-to-DC Controller General Description Features The MIC9130 is a current-mode PWM controller that efficiently converts –48V telecom voltages to logic levels. The MIC9130 features a high voltage start-up circuit that allows the device to

b14 sot23-5

Abstract: sc70-5 mosfet driver device marking code SC70-5 MOSFET DRIVER MIC2182 marking T sot23-5 Op Amp B18 SOT23-5 Marking B15 B18 SOT23 8829 mosfet k1n r1 MIC2010
Contextual Info: Q2’2001 VOLUME 12 Small, Simple and Efficient White LED DriverEfficiency vs. Output Current 90 85 80 EFFICIENCY % Micrel’s MIC2142 provides a simple solution for driving white LEDs. White LEDs are becoming the solution of choice for providing backlight to color LCD panels used in leading-edge

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller