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    SI4884BDY Search Results

    SI4884BDY Datasheets (4)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4884BDY
    		Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF 122.67KB 7
    SI4884BDY-T1
    		Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF 122.65KB 7
    SI4884BDY-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF 10
    SI4884BDY-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF 10
    SF Impression Pixel

    SI4884BDY Price and Stock

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    Vishay Siliconix SI4884BDY-T1-E3

    N-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4884BDY-T1-E3 Bulk 2,500
    • 1 -
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    • 10000 $1.79
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    Vishay Intertechnologies SI4884BDY-T1-E3

    Trans MOSFET N-CH 30V 16.5A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics () SI4884BDY-T1-E3 7,500 1
    • 1 $2.70
    • 10 $2.02
    • 100 $1.67
    • 1000 $0.89
    • 10000 $0.89
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    SI4884BDY-T1-E3 2,398
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    Quest Components () SI4884BDY-T1-E3 6,000
    • 1 $3.67
    • 10 $3.67
    • 100 $3.67
    • 1000 $1.38
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    SI4884BDY-T1-E3 6,000
    • 1 $3.60
    • 10 $3.60
    • 100 $3.60
    • 1000 $0.99
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    SI4884BDY-T1-E3 683
    • 1 $3.06
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    • 1000 $1.26
    • 10000 $1.26
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    SI4884BDY-T1-E3 580
    • 1 $3.67
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    • 1000 $1.51
    • 10000 $1.51
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    Vyrian SI4884BDY-T1-E3 650
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    Vishay Intertechnologies SI4884BDY-T1-GE3

    Trans MOSFET N-CH 30V 16.5A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4884BDY-T1-GE3 2,421 1
    • 1 $2.70
    • 10 $2.02
    • 100 $1.67
    • 1000 $0.89
    • 10000 $0.89
    		Buy Now
    Quest Components () SI4884BDY-T1-GE3 1,936
    • 1 $3.24
    • 10 $3.24
    • 100 $3.24
    • 1000 $1.78
    • 10000 $1.62
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    SI4884BDY-T1-GE3 1,936
    • 1 $3.60
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    • 100 $3.60
    • 1000 $0.99
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    Vyrian SI4884BDY-T1-GE3 15,798
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    Vishay Huntington SI4884BDY-T1-E3

    MOSFET N-CH 30V 16.5A 8-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4884BDY-T1-E3 15,000
    • 1 -
    • 10 -
    • 100 $0.79
    • 1000 $0.62
    • 10000 $0.62
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    SI4884BDY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		si4884bdysi4884bdy-t1-e318-jul-08 PDF

    Si4884BDY-T1-E3

    Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504
    Contextual Info: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		si4884bdysi4884dysi4884bdy-t1-e3si4884dy-t1-e3+3si4884dy-t1mosfet 07473504 PDF

    74648

    Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY
    Contextual Info: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si4884bdyan60901-jun-0774648+249155siliconix* 9953 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Contextual Info: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		si4884bdysi4884bdy-t1-e325impedances-61089-rev+119-jun-06 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1
    Contextual Info: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		si4884bdysi4884bdy-t1--e308-apr-05si4884bdy-t1 PDF

    74127

    Abstract: Si4884BDY
    Contextual Info: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si4884bdy18-jul-0874127 PDF

    Contextual Info: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		si4884bdysi4884bdy-t108-apr-05 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Contextual Info: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		si4884bdysi4884bdy-t1-e3si4884bdy-t1-ge318-jul-08 PDF

    Contextual Info: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		si4884bdysi4884bdy-t1-e3si4884bdy-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		si4884bdysi4884bdy-t1-e308-apr-05 PDF

    Contextual Info: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		si4884bdysi4884bdy-t1--e351450--rev01-aug-05 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		sip41109sip41110sip4111175/2a+10q406 transistorsi9120equivalent q406q406sum65n20-30si3456bdv spice device modelsud*50n025si4304dy0038 tsopsi2325ds PDF