SI7606DN Search Results

39a28

Abstract: Si7606DN
Contextual Info: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.108 @ VGS = 10 V 14.5 0.115 @ VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9 1 nC 9.1 2 D 3.30 mm S 3 COMPLIANT D Primary Side Switch S 1 RoHS APPLICATIONS

Si7606DN

Contextual Info: SPICE Device Model Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si7606

Contextual Info: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21

Si7606DN

Contextual Info: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9.1 nC PowerPAK 1212-8 • TrenchFET® Power MOSFET • Optimized for Fast Switching Applications

Si7606DN

Contextual Info: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.108 @ VGS = 10 V 14.5 0.115 @ VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9 1 nC 9.1 2 D 3.30 mm S 3 COMPLIANT D Primary Side Switch S 1 RoHS APPLICATIONS

Si7606DN

Contextual Info: Si7606DN Vishay Siliconix New Product N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ) 9.1 nC PowerPAK 1212-8 • TrenchFET® Power MOSFET • Optimized for Fast Switching Applications

AN609

Contextual Info: Si7606DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7606DN

Contextual Info: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21

Si7606DN-T1-E3

Abstract: Si7606DN
Contextual Info: Si7606DN Vishay Siliconix N-Channel 125-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.108 at VGS = 10 V 14.5 0.115 at VGS = 4.5 V 14 VDS (V) 125 Qg (Typ.) 9.1 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21

Contextual Info: Preliminary Technical Data Constant-Frequency Current-Mode Step-Up DC/DC Controller ADP1621 FEATURES High Efficiency No Sense Resistor Required ±1.0% Initial Accuracy IC Supply Voltage Range: 2.9V to 5.5V Power Input Voltage as Low as 1.0V Capable of High Supply Input Voltage (>5.5V) with

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no