220NS Search Results

Contextual Info: BYS459-1500S, BYS459F-1500S, BYS459B-1500S Vishay Semiconductors New Product formerly General Semiconductor High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns ITO-220AC BYS459F 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

ixgh40n30

Contextual Info: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300

Contextual Info: Sa nRe x ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA1 0 0 AA5 0 /6 0 VRRM=500/600V, IFAV =100A, trr=220ns, Softness=0.8 Sa nRe x Soft Recovery Diode Module DCA100AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber

g 6551

Abstract: 6551 AN 6551 ic 6551 HM-6515 HM-6516 HM-6518 HM-6551 HM-6561 um 6515
Contextual Info: H M -6 5 5 1 3 P R O D U C T S D IV IS IO N A DIVISION OF HARRIS CORPORATION 256 x 4 C M O S R A M Features Pinout LOW S T A N D B Y POW ER LOW O P E R A T IN G PO W ER 20mW /MHz M A X 220nsec M A X F A S T ACCESS T IM E D A T A R E T E N T IO N V O L T A G E

g 6551

Abstract: 6551 ic 6551 AN 6551
Contextual Info: HM-6551 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 50|iW Max Low Power O p eratio n . 20mW/MHz Max Fast Access Max

Contextual Info: HARRIS S E M I C O N D U C T O R H M - 6 5 5 1 256 x 4 CMOS RAM August 1996 Description Features Low Power Standby. 50|aW Max Low Power O p e ratio n . 20mW/MHz Max Fast Access Max

ad6v

Abstract: 40N30A 40N30
Contextual Info: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

AM9064-15

Abstract: AM9064-15PC am9064 AM9064-10 R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
Contextual Info: Am9064 65,536 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS High speed RAS access of 100 and 120ns Single +5V ±10% power supply Low power 22mW standby - 330mW active — 220ns cycle time - 385mW active — 190ns cycle time Read, Write, Read-Modify-Write, Page-Mode and RASOnly refresh capability

schematic diagram UPS 600 Power free

Abstract: schematic diagram UPS welding rectifier schematic dc welding machine circuit diagram sanrex Welding machine circuit diagram dc welding circuit diagram SanRex sanrex rectifier 600v 100a DCA100AA60
Contextual Info: SanRex Soft Recovery Diode DCA100AA50/60 IF AV = 100A, VRRM=600V trr=220ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA100AA series is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for

Contextual Info: OIXYS VCES HiPerFAST IGBT ^C25 IXGH40N30/S 600 V 60 A IXGH40N30A/S 600 V 60 A IXGH40N30B/S 600 V 60 A VCE sat 1.8 V 2.1 V 2.4 V tfi 220ns 120ns 75 ns Preliminary data TO-247 SMD* TestConditions V«s ^ = 25°C to 150°C v COR TJ = v ots Maximum Ratings

SMD B26

Abstract: SMD L4
Contextual Info: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj

ad6v

Contextual Info: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 item RAM access tim e tRAc -1 2 120ns 100ns 25ns 30ns 180ns 220ns RAM Page mode cycle (tPC)

dca100aa60

Abstract: SanRex DC chopper smps 100a circuit dca100a DCA100AA
Contextual Info: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE DCA100AA50/60 VRRM=500/600V, IFAV =100A, trr=220ns, Softness=0.8 SanRex Soft Recovery Diode Module DCA100AA is designed for applications requiring fast switching and soft recovery wave shape to reduce or eliminate the need for snubber

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 81002S/L-85, 10 , 12 description! The T K M 8 1 0 0 2 S / L is a 1,048,576 w o r d s b y 8 b i t s pcs of TC511 0 0 2 J on the p r i nted c i rcuit board. The T H M 8 1 0 0 2 S / L is o p t i m i z e d for a p p l i c a t i o n to

TXC07900AIBG

Abstract: TXC-07900AIBG TSOP transmitter B020H OED155TM TXC-07900-MB VTXP-6 AU-AIS dk12b EK117
Contextual Info: OED155 Device Dual STM-1 Overhead Terminator, Tributary Processor and Cross-Connect with Integrated E1 Mapper TXC-07900 PRODUCT PREVIEW DATA SHEET DESCRIPTION: ™ The Optimized Edge Device, OED155, is a dual STM-1 SDH framer and overhead terminator, virtual tributary

AEC-Q100

Abstract: SP10 SP11 SP12 SP13 SP14 SP15 ATTINY44
Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 120 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

APT23F60B

Abstract: APT23F60S MIC4452
Contextual Info: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

MN41256-12

Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
Contextual Info: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM

S27121

Abstract: HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature
Contextual Info: T A R G E T S P E C IF IC A T IO N *M040 HB561009A-12, H B561009A-15, H B561009A-20 P re lim in a ry MARCH, 1986 <§> H IT A C H I 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access

ct Potentiometer

Abstract: DAC391 DAC391C-12 DAC392 DAC392C-12
Contextual Info: Hybrid Systems W W CORPORATION H AP'ÍQI /QQ9 Ultra-Fast, 12-Bit, Hybrid IC DACs FEATURES b ip o l a r -15V +1SV • Fastest Voltage O utp u t DACs »? ,7 ? ,0? OFFSET o 15 ■ Fastest Current O utp u t M DACs ■ 2-Quad. M ultiplication w ith Accessible Internal Reference

Contextual Info: 40V 2.5A Buck Controller with Integrated High-Side MOSFET ISL78206 Features The ISL78206 is an AEC Q100 qualified 40V, 2.5A synchronous buck controller with a high-side MOSFET and low-side driver integrated. The ISL78206 supports a wide input voltage range

TDA 2525

Abstract: tda 1047 ML4828 ML4828CP ML4828CS ML4828IP TDA 1035 S IC tda 2525
Contextual Info: May 1997 ML4828 BiCMOS Phase Modulation/Soft Switching Controller GENERAL DESCRIPTION FEATURES The ML4828 is a complete BiCMOS phase modulation control IC suitable for full bridge soft switching converters. Unlike conventional PWM circuits, the phase modulation

ATTINY13V-10SU

Abstract: ATtiny13 sii 021
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 120 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation