APT4020BN Search Results

APT4020BN

Abstract: 4020BN APT4025BN 0504007
Contextual Info: D TO-247 G S POWER MOS IV APT4020BN 400V 26.0A 0.20Ω APT4025BN 400V 23.0A 0.25Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

0504007

Contextual Info: D TO-247 G S POWER MOS IV APT4020BN 400V 26.0A 0.20Ω Ω APT4025BN 400V 23.0A 0.25Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT4020BN 400V 26.0A 0.20Í1 APT4025BN 400V 23.0A 0.25Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 4020BN APT 4025BN

APT802R4KN

Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED

Contextual Info: A dvanced P ow er Te c h n o l o g y APT4020BN APT3520BN APT4025BN APT3525BN POWER MOS IV« 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Í2 0.20Q 0.25Q 0 .25 a N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT4020BNR

Abstract: APT4025BNR
Contextual Info: A d van ced P o w er Te c h n o lo g y Q D O APT4020BNR APT4025BNR S POWER MOS IV® 400V 400V 26.0A 0.20Í1 23.0A 0.25Q AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol V DSS 'd Al, Ratinnc. T _ _ OKor. ,

Contextual Info: O D O S A D V A N C ED PO W ER Te c h n o lo g y APT4020BN APT3520BN APT4025BN APT3525BN POWER MOS IV 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Q 0.20Q 0.2512 0.2512 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: •R A dvanced W .\A P o w e r Te c h n o l o g y * APT4020BNR APT4025BNR 400V 26.0A 0.20U 400V 23.0A 0.25Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced po w er Tec h n o lo g y APT4020BNR 400V 26.0A 0.200 APT4025BNR 400V 23.0A 0.250 Q D S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS V DSS Parameter APT4020BNR Drain-Source Voltage /\ APT4025BNR

4020BN

Abstract: 3520BN APT3520BN
Contextual Info: ADVANCED POW ER Te c h n o l o g y 0 O D O APT4020BN APT3520BN APT4025BN APT3525BN s H? WER MOS ÍT0 400V 350V 400V 350V 26.0A 26.0A 23.0A 23.0A 0.20Q. 0.20Í2 0.25Í2 0.25Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Te c h n o lo g y 0 APT4020BNR APT4025BNR i d f 'w t R m o s r ü 400V 26.0A 0.20i> 400V 23.0A 0.25Œ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT5085BN

Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN