APT4016BN Search Results

DIODE 4008

Abstract: 4018B APT4016BN APT4018BN 4016BN
Contextual Info: D TO-247 G S POWER MOS IV APT4016BN 400V 31.0A 0.16Ω APT4018BN 400V 29.0A 0.18Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: A d va n ced P o w er Te c h n o l o g y 9 O D O S POWER MOS IV APT4016BN 400V 31.0A 0.16Q APT4018BN 400V 29.0A 0.180 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT APT 4016BN

diode s 360

Contextual Info: A d van ced P o w er Te c h n o l o g y 8 O D Ô S APT4016BNR APT4018BNR 400V 31.0A 0.160 400V 29.0A 0.18<> POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT802R4KN

Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED

max3129

Contextual Info: • r W æ M ADVANCED P ow er Te c h n o l o g y APT4016BNR APT4018BNR 400V 31.0A 0.1612 400V 29.0A 0.18Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D APT4016BNR APT4018BNR O S POWER MOS IV« 400V 31.0A 0.160 400V 29.0A 0.18£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS Parameter APT4016BNR Drain-Source Voltage

Contextual Info: O D O S A dvanced P o w er Te c h n o l o g y GFWER MOS ¡TE APT4016BN 400V 31.0A 0.16U APT4018BN 400V 29.0A 0.18Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 4016BN APT 4018BN

APT4016BN

Contextual Info: D TO-247 G S POWER MOS IV APT4016BN 400V 31.0A 0.16Ω Ω APT4018BN 400V 29.0A 0.18Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: A D V A N C ED PO W ER Te c h n o l o g y OD OS POWER MOS IV® APT4016BN 400V 31.0A APT4018BN 400V 29.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS A ll R a tin g s : T c = 2 5 °C u n le s s o th e rw is e s p e c ifie d . APT

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT30M85BNR

Abstract: LSE 405 APT3010BNR APT30M85 016Q
Contextual Info: A dvanced P o w er Te c h n o lo g y O D O S APT30M85BNR 300V APT3010BNR 300V POWER MOS IV® 40A 0.0850 35A 0.100Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M A XIM U M R ATING S Symbol All Ratings: T c = 25°C unless otherwise specified.