APT5020BN Search Results

5020BN

Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
Contextual Info: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U APT5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN

Contextual Info: A d van ced P o w er Te c h n o l o g y O D Ô APT5020BNR APT5022BNR S 500V 28.0A 0.20Q 500V 27.0A 0.220 POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS V GS GSM ^ @ Tc A P T 50 22B N R U N IT

APT5020BNR

Abstract: APT5022BNR
Contextual Info: O D O S A d va n ced P o w er Te c h n o l o g y * APT5020BNR APT5022BNR POWER MOS IV‘ 500V 28.0A 0.2011 500V 27.0A 0.22£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd ' dm VGS V GSM PD

Contextual Info: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

APT5020BNR

Contextual Info: A dvanced ro w er Te c h n o l o g y APT5020BNR 500V 28.0A 0.2012 APT5022BNR 500V 27.0A 0.2212 O D O S lib 'W tR m o s m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

2091J

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5020BNR 500V 28.0A 0.200 APT5022BNR 500V 27.0A 0.22Q O S POWER MOS IVe AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

APT5022BNFR

Abstract: APT5020BNFR 5022BNF
Contextual Info: ADVANCED POWER Te c h n o l o g y APT5020BNFR APT5022BNFR POWER MOS IV® 500V 500V 28A 27A 0.20Q 0.22Í2 AVALANCHE RATED FREDFET N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT5022BNFR

Abstract: APT5020BNFR APT5020 sv 4380 DDD1470 5022BN 5022B
Contextual Info: A d van ced P o w er T e c h n o l o g yr APT5020BNFR APT5022BNFR POWER MOS IV' 500V 500V 28A 0.20Í2 27A 0.22Q AVALANCHE RATED FREDFET N-C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd *DM V GS V GSM Parameter TJ’"I STG

Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S APT5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

5020bn

Abstract: APT5020BN 5020B APT 5020BN APT5022BN N mos 100v 100A
Contextual Info: D TO-247 G S POWER MOS IV APT5020BN 500V 28.0A 0.20Ω APT5022BN 500V 27.0A 0.22Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APTS022BNF

Abstract: APTS020BNF
Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y L.3E D • G E S ? 1^ 0 0 0 1 1 2 3 G2fl H A V P A d van ced P o w er Tec h n o lo g y APT5020BNF 500V 28A 0.20Í2 APT5022BNF 500V 27A 0.22Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

APT 5020BN

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT5020BN 500V 28.0A 0.20Í1 APT5022BN 500V 27.0A 0.22Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

5020BNF

Abstract: 5020bn CR diode transient APT5022BNF 5022BNF APT5020BNF 0257E 5022B
Contextual Info: A D V A NC E D POWER TECHNOLOGY b3E D • D2S7101 0DD11E5 02S IA VP A dvanced P o w er Te c h n o l o g y APT5020BNF APT5022BNF POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.22Q FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

5020B

Contextual Info: A d v a n ced P o w er Te c h n o l o g y ' Q D O APT5020BN 500V 28.0A 0.200 APT5022BN 500V 27.0A 0.22Q S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V All Ratings: Tc = 25°C unless otherwise specified. P aram eter

Contextual Info: • r ADVANCED W .^ A P o w e r M Te c h n o lo g y APT5020BNFR 500V 28A 0.200 APT5022BNFR 500V 27A 0.2212 I s P 'J F t R M O S AVALANCHE RATED FREDFET P ® N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

zvt boost converter

Abstract: uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin
Contextual Info: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT5085BN

Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =

zvt boost converter

Abstract: uc3855 Application Note SATURABLE CORE APT5020BN flyback transformer toshiba tv Design equations of high-power-factor flyback ZVT technique Unitrode Power Supply Design UC3855 8 pin saturable core oscillator
Contextual Info: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,

500w audio amplifier circuit diagram

Abstract: ZVT 440 zvt boost converter high power FERRITE TRANSFORMER SLUA146A SATURABLE CORE Saturable Core Square Wave Oscillator uc3855 Application Note UC3855A 95160
Contextual Info: Application Report SLUA146A - May 1996 − Revised April 2004 UC3855A/B High Performance Power Factor Preregulator Jim Noon System Power ABSTRACT The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency, which allows a reduction in the