1001r1bn
Abstract: 130Q APT1001R3BN diode 1000V
Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.
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apt1001r1bnapt901r1bnapt1001r3bnapt901r3bn+7901r1bn1001r1bn901r3bn1001r3bno-247ad130qdiode 1000v
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Contextual Info: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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apt1001r1bnapt901r1bnapt1001r3bnapt901r3bn+6901r1bn1001r1bn901r3bn1001r3bnapt1001r1/901r1/1001r3/901r3bno-247ad
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APT901R3BN
Abstract: APT1001R3BN
Contextual Info: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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apt1001r1bnapt901r1bnapt1001r3bnapt901r3bn+3901r1bn/1001r3bno-247ad
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Contextual Info: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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apt1001r1bnapt1001r3bn1001rbn1001r3bn+3150voltageapt1001r1/1001r3bno-247ad
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APT1001R1BN
Abstract: APT901R1BN 1001R3BN 1001r1bn
Contextual Info: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.
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apt1001r1bnapt901r1bnapt1001r3bnapt901r3bn+7901r1bn1001r1901r3bn1001r3bn100msapt101001r1bn
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1001RBN
Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
Contextual Info: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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o-247apt1001r1bnapt1001r3bn1001rbn+31001r3bno-247ad1001rb
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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o-247apt1001rbnapt1001r1bnapt1001rbnr+16apt1001r1bnrapt1001r3bnapt1001r6bnapt1002rbnapt1002r4bnapt1002rbnrapt*1002r4bnapt5040bnffredfetapt802r4bnapt5020bnrapt5085bnapt5020bnfapt5025bnapt6040bnrapt5085bnf
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BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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ad818ad818diead820ad821+12ad820dieo-204aa/to-3bd119bc148aapt1002rbnr1000 volt npnbd109apt5025anapt904r2bnbd107apt1001r3anapt1004rbnr
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