APT801R Search Results

Contextual Info: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 APT801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage

APT801R2cN

Abstract: C 632 S1M
Contextual Info: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

801R4BN

Abstract: 801R2BN APT801R2BN
Contextual Info: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN APT751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.

801R2BN

Abstract: APT801R2BN 801R4BN 801r2 APT751R2BN APT751R4BN APT801R4BN
Contextual Info: o A D V A N CED R o w er Te c h n o l o g y D APT801R2BN APT751R2BN APT801R4BN APT751R4BN Ô S POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40a 1.40a N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tr = 25°C unless otherwise specified.

APT5025AN

Abstract: APT4020AN APT6040AN APT1002RAN APT1003R5AN APT3540AN APT4525AN apt5025 APT902R4AN apt902ran
Contextual Info: A D V A N C E D PO W E R T E C H N O L O G Y APT PA R T NUMBER APT1001 RAN APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN

APT5085AN

Abstract: APT1002RAN APT4020AN APTS050AN APT8075AN APT1001 APT1001R2AN APT4030AN APT1003R5AN APT1004R2AN
Contextual Info: ADVANCED APT PART NUMBER APT1 00 1 RA N APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN APT7575AN APT7590AN APT751R2AN

Contextual Info: ADVANCED P OWE R TECHNOLOGY 41E D • 0 5 5 7 1 0 1 OOOQMflfi 35fl « A V P ■ R A d va n ced r J PO W ER T JviS Te c h n o lo g y APT801R2AN APT751R2AN APT801R4AN APT751R4AN POWER MOS IV 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 a 1.20 i2 1.40 ß 1.40 £2

APT801R2AN

Abstract: 801R4AN 801R2AN APT751R2AN APT751R4AN APT801R4AN 801r2
Contextual Info: ADVANCED POWER TECHNOLOGY M ^E DESTEDT D OOOOMfl fl 35Ô • AVP A d va n c e d P o w er t j i - i s Te c h n o lo g y POWER MOS IV APT801R2AN APT751R2AN APT801R4AN APT751R4AN 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 1.20 1.40 1.40 £2 Í2 £2 Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A dvanced P ow er Tec h n o lo g y APT801R2BN APT751R2BN APT801R4BN APT751R4BN POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

801R4BN

Contextual Info: S F O D ò s f f it v A dvanced P ow er Te c h n o l o g y APT801R2BNR APT801R4BNR / / / / , i mos n 800V 9.0A 1.200 800V 8.SA 1.400 UIS RATED i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y * APT801R2BNR APT801R4BNR 800V 9.0A 1.2012 800V 8.5A 1.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN

801R2BN

Abstract: APT801R2BN
Contextual Info: A dvanced POW ER Te c h n o l o g y O D Ô APT801R2BN APT751R2BN APT801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.

U135

Abstract: APT801R2BN SEM-800 sem800 dixon uc19432 260kHz flyback transformer 30 volt transformer construction planar transformer layout car amplifier 200w circuit flyback 200w
Contextual Info: U-135 APPLICATION NOTE The UC3848 Average Current Mode Controller Squeezes Maximum Performance from Single Switch Converters by JOHN A. O’CONNOR ABSTRACT This application note describes the UC3848 average current mode PWM controller. The unique features of

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

Contextual Info: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN

Contextual Info: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN

Contextual Info: ADVANCED POWER dTJossttdt TECHNOLOGY For Additional Information Contact APT Sales Representatives Or The Factory. APT P ART# UNITS s \ \ \ s. \ X \ i 3<=W5 A P T oocmocm Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5AN APT1004R2AN APT902R5AN

APT100-101DN

Abstract: APT50 APT6014 APT6060DN
Contextual Info: A DV AN CE D POWER T ECHNOL OGY 2DE D • 0257^0^ 104 D R A IN ­ SOURCE VO LTAG E BVDSS VOLTS APT10040D N 1000 APT1001R D N 1000 APT100-101 DN 1000 APT1002R D N 1000 AP T1003R 5D N 1000 900 APT9040D N APT901R D N 900 APT90-101 DN 900 APT902R D N 900 APT903R 5D N

Contextual Info: ADVANCED POWER TE CH N0 L 06 Y blE J> • ADVANCED P o w er Te c h n o l o g y ?D S 0257=10=1 OOOOSOl 3b1 H J W P ® O S POWER MOS IV APT601R3GN APT551R3GN APT601R6GN APT551R6GN 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30Q 1.30Q 1.60Q 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN