APT551 Search Results

Contextual Info: A D V A NC E D POWER TECHNOLOGY 4*JE D • □ 5 S 7 S G ci A 0000305 d v a TST n c HAVP e d POWER ; T-3P \ - \ 5 Te c h n o lo g y APT601R3BN APT551R3BN APT601R6BN APT551R6BN „ POWER MOS IV™ 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30 £2 1.30 £2

APT601R3/601R6KN

Contextual Info: ADVANCFD P O WF R TECHNOLOGY M 'lE D 0 5 S 7 ‘10I1 OOOOMfiO 0b7 H A V P A dvanced POWER 'T-3°y-l3 Te c h n o l o g y POWER MOS IV APT601R3AN APT551R3AN APT601R6AN APT551R6AN 600V 550V 600V 550V 6.5A 6.5A 6.0A 6.0A 1.30 Q 1.30 i i 1.60 Cl 1.60 & N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5518BFLL

Abstract: APT5518SFLL
Contextual Info: APT5518BFLL APT5518SFLL 550V 31A 0.180W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

5514f

Abstract: TO220H APT5514 TO-220H
Contextual Info: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.

APT551R2AN

Abstract: APT601R2AN TO220H
Contextual Info: ADVANCED POWER TECHNOLOGY OÖE D | DESTTCn ODDDlbS Ì | A d v a n c e d t- ^ 13 P o w er Te c h n o l o g y APT601R2AN 600V 7.0A 1.20 ß APT551R2AN 550V 7.0A 1.20 £2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

APT5513JFLL

Contextual Info: APT5513JFLL 550V 35A 0.130W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: ADVANCED POWER TE CH N0 L 06 Y blE J> • ADVANCED P o w er Te c h n o l o g y ?D S 0257=10=1 OOOOSOl 3b1 H J W P ® O S POWER MOS IV APT601R3GN APT551R3GN APT601R6GN APT551R6GN 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30Q 1.30Q 1.60Q 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5510JFLL

Contextual Info: APT5510JFLL 550V 44A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

APT5510B2FLL

Abstract: APT5510LFLL
Contextual Info: APT5510B2FLL APT5510LFLL 550V 49A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

414X

Abstract: TO220H DIODE 1334 LM 2228A
Contextual Info: ADVANCED POWER TECHNOLOGY OÖE D | DESTTCn ODDDlbS Ì | A d v a n c e d t- ^ 13 P o w er Te c h n o l o g y APT601R2AN 600V 7.0A 1.20 ß APT551R2AN 550V 7.0A 1.20 £2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

TO220H

Abstract: DIODE 1334 LM
Contextual Info: ADVANCED POWER TECHNOLOGY DflE D | 0BS7TDT 00DDa37 fl | A d v a n c e d r 5i P o w er Te c h n o l o g y '^ APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

APT5513B2FLL

Abstract: APT5513LFLL
Contextual Info: APT5513B2FLL APT5513LFLL 550V 41A 0.130W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

319F

Abstract: APT5518BFLL APT5518SFLL
Contextual Info: APT5518BFLL APT5518SFLL 550V 31A 0.180Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

3471A

Abstract: 601R6BN APT551R
Contextual Info: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN APT551R3BN APT601R6BN APT551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT551R2BN

Abstract: APT601R2BN DDD023T TO220H D 819 414x cq 538
Contextual Info: ADVANCED POW ER T E C H N O L O G Y DflE D | 0 B S 7 T D T 0 0 D D a 3 7 fl | A d v a n c e d r 5i '^ P o w er Te c h n o l o g y APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5510B2FLL

Abstract: APT5510LFLL
Contextual Info: APT5510B2FLL APT5510LFLL 550V 49A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT5513JFLL

Contextual Info: APT5513JFLL 550V 35A 0.130Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT5510JFLL

Contextual Info: APT5510JFLL 550V 44A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN

APT801R2DN

Abstract: APT5085DN
Contextual Info: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN

apt4020an

Contextual Info: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20