APT6070BN Search Results

APT6060BN

Abstract: 6060BN 6070bn APT6070BN APT6060/5560
Contextual Info: O A d van ced D po w er Te c h n o l o g y * O APT6060BN APT5560BN APT6070BN APT5570BN S POWER MOS IV« 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T r = 25°C unless otherwise specified.

Contextual Info: APT6070BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)

APT6060BNR

Abstract: APT6070BNR APT6070BN
Contextual Info: A dvanced P o w er Te c h n o lo g y O D O APT6060BNR APT6070BNR S POWER MOS IV' 600V 13.0A 0.600 600V 12.0A 0.70Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

6060BN

Abstract: 6070bn APT6060BN APT6070BN APT5560BN APT5570BN 070Q
Contextual Info: A d van ced R o w er Te c h n o lo g y Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: O A dvanced P ow er Tec h n o lo g y D APT6060BN APT5560BN APT6070BN APT5570BN O S G F v ítR m o s n ü 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Q 0.70Q 0.70Í3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All R a tin g s: T c = 25 "C u n le ss o th e rw ise sp e cifie d .

Contextual Info: APT6070BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)

APT6060BNR

Abstract: APT6070BNR ARJ6060B PT606 APT6070BN
Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D O APT6060BNR APT6070BNR S POWER MOS IV® 600V 13.0A 0.60S2 600V 12.0A 0.70» AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POW ER Te c h n o lo g y O D O APT6060BNR APT6070BNR S H?"vv t'H M O S 600V 13.0A 0.6012 600V 12.0A 0.70Q AVALANCHE RATED í W N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd Parameter APT6060BNR APT6070BNR

Contextual Info: A d van ced P o w er Te c h n o l o g y * O D O S APT6060BNR 600V 1 3 .0 A 0 .6 0 Q APT6070BNR 600V 1 2 .0 A 0 .7 0 0 POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT60608NR Parameter Continuous Drain Current @ T c = 25°C

lm 5560

Contextual Info: A dvanced P ow er T e c h n o lo g y 9 Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

APT5085BN

Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN