APT801R4BN Search Results

Contextual Info: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 APT801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage

801R4BN

Abstract: 801R2BN APT801R2BN
Contextual Info: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN APT751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.

801R2BN

Abstract: APT801R2BN 801R4BN 801r2 APT751R2BN APT751R4BN APT801R4BN
Contextual Info: o A D V A N CED R o w er Te c h n o l o g y D APT801R2BN APT751R2BN APT801R4BN APT751R4BN Ô S POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40a 1.40a N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tr = 25°C unless otherwise specified.

Contextual Info: A dvanced P ow er Tec h n o lo g y APT801R2BN APT751R2BN APT801R4BN APT751R4BN POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

801R4BN

Contextual Info: S F O D ò s f f it v A dvanced P ow er Te c h n o l o g y APT801R2BNR APT801R4BNR / / / / , i mos n 800V 9.0A 1.200 800V 8.SA 1.400 UIS RATED i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y * APT801R2BNR APT801R4BNR 800V 9.0A 1.2012 800V 8.5A 1.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN

801R2BN

Abstract: APT801R2BN
Contextual Info: A dvanced POW ER Te c h n o l o g y O D Ô APT801R2BN APT751R2BN APT801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

Contextual Info: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN