APT1002RBN Search Results

APT*1002R4BN

Abstract: 2T640
Contextual Info: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3* WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

902R4BN

Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Contextual Info: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

Contextual Info: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN

APT1002R4BN

Contextual Info: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

1002r4bn

Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN
Contextual Info: D TO-247 G APT1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 APT1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.

APT1002RBNR

Contextual Info: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

1001R6BN

Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN
Contextual Info: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage