1002RBN Search Results

902R4BN

Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Contextual Info: A D V A N CED PO W ER Tec h n o lo g y O D 1002RBN APT902RBN APT1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

APT902R4BN

Contextual Info: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' 1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q APT1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT1002R4BN

Contextual Info: A D V A N CED PO W E R Te c h n o l o g y OD 1002RBN OS 1000V 7.0A 2.00Í1 APT1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O 1002RBN APT902RBN APT1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

1002r4bn

Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN
Contextual Info: D TO-247 G 1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

1002RBN

Abstract: SML1002RBN 1002r4bn 902R4BN
Contextual Info: SEMELAB PLC bOE J> m a i3 3 1 fi? 0000tiG4 3fiD * $ 1 1 1 8 T ^ - i S MOS POWER 4 =FF= 1002RBN 1000V 7.0A 2.00Q SML902RBN 900V 7.0A 2.0012 SML1002R4BN 1000V 6.5A 2.40Q SML902R4BN 900V 6.5A 2.4012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS