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    APT5027BN Search Results

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    Advanced Power Technology

    Advanced Power Technology APT5027BNR

    POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 500V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD
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    Quest Components APT5027BNR 22
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    APT5027BN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5027bnr

    Abstract: 5027B
    Contextual Info: A d v a n ced P o w er Te c h n o l o g y 8 O D O APT5027BNR 500V 20.0A 0.27U S POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ^DSS A v D ra in -S o u rc e V o lta g e 'd 6 C o n tin u o u s D ra in C u rre n t @ T c - 2 5 °C


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    apt5027bnr5027b5027bnr PDF

    Contextual Info: A O D d v a n c e d P ow er T e c h n o lo g y ' APT5027BNR O s POWER MOS IV 500V 20.0A 0.270 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified. Parameter APT5027BNR


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    apt5027bnro-247ad100ms PDF

    Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5027BNR 500V 20.0A 0.27Í2 O s W»'vvtR MOS m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d All Ratings: Tc = 25°C unless otherwise specified. Parameter


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    apt5027bnro-247ad PDF

    APT5027BNR

    Abstract: APT5027
    Contextual Info: s o D 6 s A d v a n ced P o w er Te c h n o l o g y • APT5027BNR 500V 20.0A 0.27Q TOWER MOS IV^ AVALANCHE RATED N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter


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    apt5027bnro-247adapt5027 PDF

    APT*1002R4BN

    Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
    Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0


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    o-247apt1001rbnapt1001r1bnapt1001rbnr+16apt1001r1bnrapt1001r3bnapt1001r6bnapt1002rbnapt1002r4bnapt1002rbnrapt*1002r4bnapt5040bnffredfetapt802r4bnapt5020bnrapt5085bnapt5020bnfapt5025bnapt6040bnrapt5085bnf PDF

    Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =


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    apt4020bnrapt4025bnrapt4030bnrapt4040bnr+6apt4065bnrapt4080bnrapt5020bnrapt5022bnrapt5025bnrapt5027bnr PDF

    APT5085BN

    Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
    Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =


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    0000fci3co-247apt4020bnrapt4025bnr+11apt4030bnrapt4040bnrapt4065bnrapt4080bnrapt5020bnrapt5022bnrapt5085bnapt4065bnapt6045bnrapt5027bnapt501r1bn PDF

    C085

    Abstract: APT5027BN T35 diode
    Contextual Info: ADVANCED PO WER TECHNOLOGY b lE D • Q 5 S 7 [l G [ì □GGD740 123 MAVP A d van ced P o w er Te c h n o l o g y 0 A P T 5 0 2 7 B N 5 0 0 V 2 2 .0 A 0 .2 7 ÌÌ POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol


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    ggd740apt5027bnq0gg742o-247ad+2c085t35 diode PDF

    APT802R4KN

    Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
    Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN


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