APT5027 Search Results

Contextual Info: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .

APT5027BVR

Contextual Info: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

5027bnr

Abstract: 5027B
Contextual Info: A d v a n ced P o w er Te c h n o l o g y 8 O D O APT5027BNR 500V 20.0A 0.27U S POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ^DSS A v D ra in -S o u rc e V o lta g e 'd 6 C o n tin u o u s D ra in C u rre n t @ T c - 2 5 °C

1DOA

Abstract: 0270A
Contextual Info: APT5027SVR A DVAN CED P o w er Te c h n o lo g y ' soov 20A 0.270a POWER MOSV Power M O S V™ is a new generation of high voltage N-Channe! enhancement mode power M O S FETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power M O S V™

Contextual Info: • r advanced W .^A P o w er Te c h n o lo g y ' APT5027SVR soov 2oa 0.270Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A O D d v a n c e d P ow er T e c h n o lo g y ' APT5027BNR O s POWER MOS IV 500V 20.0A 0.270 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified. Parameter APT5027BNR

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5027BNR 500V 20.0A 0.27Í2 O s W»'vvtR MOS m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d All Ratings: Tc = 25°C unless otherwise specified. Parameter

APT5027BVR

Abstract: 500V20A APT5027
Contextual Info: APT5027BVR ADVANCED W ZA P o w e r Te c h n o l o g y 500V 20A 0.270Í2 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFE Ts. This new technology minimizes the J F E T effect, increases packing density and reduces the on-resistance. Power M OS V

APT5027

Abstract: APT5027CLL
Contextual Info: APT5027CLL 500V 16A 0.270Ω POWER MOS 7 R MOSFET TO-254 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

T5027S

Abstract: 80AMPS
Contextual Info: O A d v a n ced P o w er Te c h n o l o g y D APT5027SNR O s 3* WER MOS ÍT® 500 V 20.0A 0.27a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS Sym bol ^DSS A ll R a tin g s : T c = 2 5 ‘ C u n le s s o th e rw is e s p e c ifie d .

APT5027BNR

Abstract: APT5027
Contextual Info: s o D 6 s A d v a n ced P o w er Te c h n o l o g y • APT5027BNR 500V 20.0A 0.27Q TOWER MOS IV^ AVALANCHE RATED N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

C085

Abstract: APT5027BN T35 diode
Contextual Info: ADVANCED PO WER TECHNOLOGY b lE D • Q 5 S 7 [l G [ì □GGD740 123 MAVP A d van ced P o w er Te c h n o l o g y 0 A P T 5 0 2 7 B N 5 0 0 V 2 2 .0 A 0 .2 7 ÌÌ POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN