APT20M45B Search Results

Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT20M45BVR

Contextual Info: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

20M60BNFR

Contextual Info: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified.

TL 084L

Abstract: APT20M45BNR APT20M60BNR 20M60
Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O S APT20M45BNR 200V APT20M60BNR 200V 58A 0.04512 50A 0.0600 POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT20M45BVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

20M60

Abstract: APT20M60BNFR 20M60BN GD142 APT20M45BNFR BVJ 47 20M60BNFR
Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV® 200V 58A 200V 50A 0.045U 0.060U AVALANCHE RATED FREDFET N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS ’d 'dm V GS V GSM PD t j ,t s t g

APT20M45B

Abstract: APT20M45BVR Diode 224
Contextual Info: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves

20M60

Contextual Info: A dvanced P o w er Te c h n o l o g y Q D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV* 58A 50A 0.045Í2 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT20M45BVFR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

Contextual Info: A dvanced POW ER TECHNOLOGY * O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV 58A 0.0450 50A 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter

0502045

Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR sBWER MOS IV'01 200V 58A 0.0451» 200V 50A 0.06012 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .

Contextual Info: A dvanced APT20M45BVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT20M45BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT20M45BVR

Contextual Info: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

S50J

Contextual Info: A d van ced P o w er Te c h n o l o g y APT20M45BVFR 200V 56A 0.0450 «i POWER MOS V F REDFET Power MOS V'” is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

20m60

Abstract: APT20M45
Contextual Info: A dvanced P ow er Te c h n o l o g y • APT20M45BNR 200V APT20M60BNR 200V POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

PS224

Abstract: PS 224 max4860
Contextual Info: APT20M45BVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: APT20M45BVFR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V POWER MOSV 56A 0.0450 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT20M45BVFR

Contextual Info: APT20M45BVFR 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

lg ds 325

Contextual Info: A dvanced P o w er T e c h n o lo g y APT20M45BVR 200V s6a o.o45ß POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT20M45BNFR

Contextual Info: A d v a n c e d Pow er T e c h n o lo g y APT20M45BNFR APT20M60BNFR 200V 58A 0.045U 200V 50A 0.060Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: •P\ A d v a n c e d W /Æ POW ER iiM T e c h n o l o g y APT20M45BNR 200V APT20M60BNR 200V 58A 0.045U 50A 0.060Í2 AVALANCHE RATED O * W ER MOS N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D All Ratings: Tc = 25°C unless otherwise specified.

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.