APT5025 Search Results

TYC 365

Abstract: APT5025BN APT5025BNR APT5030BNR
Contextual Info: O s A dvanced P o w er Te c h n o l o g y APT5025BNR APT5030BNR POWER MOS IV® 500V 23.0A 0.25Q 500V 21,0A 0.30£2 AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol Parameter 'd *DM VGS GSM PD TJ’TSTG

5025bn

Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS

5025BN

Abstract: apt5025 APT5025BN APT5030BN 5007 5030BN N mos 100v 100A
Contextual Info: D TO-247 G S POWER MOS IV APT5025BN 500V 23.0A 0.25Ω APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT5025HN

Abstract: apt5025h
Contextual Info: A D V A NC ED POIiJER TECHNOLOGY L IE D • G S 5 7 11DR G0QGÔ17 7S1 «A VP A d va n ced POWER Te c h n o lo g y 0 POWER MOS IV APT5025HN APT4525HN APT5030HN APT4530HN 500V 450V 500V 450V 21.0A 21.0A 19.0A 19.0A 0.25D 0.25Q 0.30Î2 0.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

APT5025AN

Abstract: 5025an apt5025 APT4525AN 5030AN apt 5025an 4525AN H3906 APT4530AN APT5030AN
Contextual Info: A DV A NC E D Q D O S POWER TECHNOLOGY 41E » • 0557=10=1 0 0 0 0 4 b 0 57T H A V P H ADVANCED r M POWER •r-s°»-i5 ^ M i Techno lo g y APT5025AN APT4525AN APT5030AN APT4530AN POWER MOS IV 500V 450V 500V 450V 20.0A 20.0A 18.0A 18.0A 0.25 0.25 0.30

Contextual Info: A dvanced P o w er Te c h n o l o g y • POWER MOS IVe APT5025BN -APT4525BN APT5030BN APT4530BN 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Tec h n o lo g y APT5025BNR APT5030BNR 500V 23.0A 0.25Q 500V 21 .OA 0.30Î2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d V GS GSM PD t j ,t s t g T Parameter APT5025BNR

Contextual Info: A dvanced O D po w er Te c h n o l o g y APT5025BNR 500V 23.0A 0.25Í2 APT5030BNR 500V 21,0A 0.30Í2 Ô S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT5025BN 500V 23.0A 0.25Í1 APT5030BN 500V 21.0A 0.30Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

apt5025

Contextual Info: O D O S A d va n ced P o w er Te c h n o l o g y * APT5025BNR APT5030BNR 500V 23.0A 0.25Í2 500V 21.0A 0.30Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT5025BNR Parameter Drain-Source Voltage 500 Continuous Drain Current @ Tc

APT5025BN

Abstract: 5025bn APT4525BN apt5025
Contextual Info: A d van ced R o w er Te c h n o lo g y 9 D APT5025BN APT4525BN APT5030BN APT4530BN Os POWER MOS IV® 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

regulator 7812 ct

Abstract: TRANSISTOR 7812 ct 7812 voltage regulator 5A 100k trimpot 1n5406 MOTOROLA Siemens Ferrite B64290 4229PL00-3C8 B64290-K45-X830 R16 N30 7812 12V 1A positive voltage regulator 7812 12V voltage regulator
Contextual Info: April 1998 ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design of the ML4812 to increase system noise immunity. The circuit includes a

APT801R2DN

Abstract: APT5085DN
Contextual Info: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN

scr gate driver ic

Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
Contextual Info: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards

HEXFET Power MOSFET Designers Manual

Abstract: "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710
Contextual Info: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

Voltech pm3000

Abstract: schematic diagram computer Power supply 500w Voltech PM1000 ML4821 Voltech IRF840 600w power amplifier circuit diagram 200W MOSFET POWER AMP 500w power amplifier circuit diagram 200w computer power supply Circuit diagram
Contextual Info: August 1997 Application Note 42030 Theory and Application of the ML4821 Average Current Mode PFC Controller THEORY OF OPERATION The increasing importance of power factor correction has created a demand for active power factor controller Integrated Circuits. Power factor correction requires

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

APT9402

Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
Contextual Info: APPLICATION NOTE APT9402 By: Kenneth Dierberger UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETs AND AVALANCHE ENERGY RATED MOSFETs Presented at PCIM ‘94 DALLAS 1 UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETS AND AVALANCHE ENERGY RATED MOSFETS

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

7812 12V 1A positive voltage regulator price

Abstract: regulator 7812 ct 1k trimpot 7812 voltage regulator 5A motorola sc 7812 768T188-3C8 Ferroxcube 3C8 TRANSISTOR 7812 ct single phase IC1 7812 B64290-K45
Contextual Info: April 1998 ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The ML4812 is designed to optimally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design of the ML4812 to increase system noise immunity. The circuit includes a