APT5030BN Search Results

TYC 365

Abstract: APT5025BN APT5025BNR APT5030BNR
Contextual Info: O s A dvanced P o w er Te c h n o l o g y APT5025BNR APT5030BNR POWER MOS IV® 500V 23.0A 0.25Q 500V 21,0A 0.30£2 AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol Parameter 'd *DM VGS GSM PD TJ’TSTG

5025bn

Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS

5025BN

Abstract: apt5025 APT5025BN APT5030BN 5007 5030BN N mos 100v 100A
Contextual Info: D TO-247 G S POWER MOS IV APT5025BN 500V 23.0A 0.25Ω APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT901RBN

Abstract: APT1001RBN 1001RBN APT5030BN
Contextual Info: D TO-247 G APT1001RBN 1000V 11.0A 1.00Ω S POWER MOS IV 21.0A 0.30Ω APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: A dvanced P o w er Te c h n o l o g y • POWER MOS IVe APT5025BN -APT4525BN APT5030BN APT4530BN 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Tec h n o lo g y APT5025BNR APT5030BNR 500V 23.0A 0.25Q 500V 21 .OA 0.30Î2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d V GS GSM PD t j ,t s t g T Parameter APT5025BNR

Contextual Info: A dvanced O D po w er Te c h n o l o g y APT5025BNR 500V 23.0A 0.25Í2 APT5030BNR 500V 21,0A 0.30Í2 Ô S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT5025BN 500V 23.0A 0.25Í1 APT5030BN 500V 21.0A 0.30Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

apt5025

Contextual Info: O D O S A d va n ced P o w er Te c h n o l o g y * APT5025BNR APT5030BNR 500V 23.0A 0.25Í2 500V 21.0A 0.30Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT5025BNR Parameter Drain-Source Voltage 500 Continuous Drain Current @ Tc

APT5025BN

Abstract: 5025bn APT4525BN apt5025
Contextual Info: A d van ced R o w er Te c h n o lo g y 9 D APT5025BN APT4525BN APT5030BN APT4530BN Os POWER MOS IV® 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

Contextual Info: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =

APT5085BN

Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Contextual Info: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

APT5085BN

Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Contextual Info: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN