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    1001RB Search Results

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    Microchip Technology Inc APT1001RBNPB

    MOSFET MOS 4 1000 V 1 Ohm TO-247 - Bulk (Alt: APT1001RBNPB)
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    Avnet Americas APT1001RBNPB Bulk 30
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    Mouser Electronics APT1001RBNPB
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    Microchip Technology Inc APT1001RBNPB Tube 28 Weeks
    • 1 $49.20
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    Master Electronics APT1001RBNPB
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    • 100 $42.88
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    Microchip Technology Inc APT1001RBVFRG

    - Rail/Tube (Alt: APT1001RBVFRG)
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    Avnet Americas APT1001RBVFRG Tube 26 Weeks 40
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    Mouser Electronics APT1001RBVFRG 30
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    Newark APT1001RBVFRG Bulk 250
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    Microchip Technology Inc APT1001RBVFRG Tube 158 26 Weeks
    • 1 $15.32
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    Richardson RFPD APT1001RBVFRG 40
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    Avnet Silica APT1001RBVFRG 28 Weeks 1
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    EBV Elektronik APT1001RBVFRG 27 Weeks 1
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    Master Electronics APT1001RBVFRG 40
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    Microchip Technology Inc APT1001RBVRG

    - Rail/Tube (Alt: APT1001RBVRG)
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    Avnet Americas APT1001RBVRG Tube 20 Weeks 40
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    Mouser Electronics APT1001RBVRG
    • 1 $14.08
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    Newark APT1001RBVRG Bulk 250
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    Microchip Technology Inc APT1001RBVRG Tube 20 Weeks
    • 1 $14.08
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    • 100 $12.16
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    Richardson RFPD APT1001RBVRG 40
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    Avnet Silica APT1001RBVRG 22 Weeks 1
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    EBV Elektronik APT1001RBVRG 21 Weeks 1
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    Master Electronics APT1001RBVRG
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    • 10 $13.64
    • 100 $11.57
    • 1000 $11.15
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    CSB Battery CSB-1001/RBC4

    Sealed Lead Acid Battery 1 PC 12V 12AH GP12120F2 W/TERM CVR
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    Mouser Electronics CSB-1001/RBC4
    • 1 $76.41
    • 10 $63.28
    • 100 $52.40
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    Qnity Laird 67B3G3006010010R0B

    EMI Gaskets, Sheets, Absorbers & Shielding SP,con,3,Au 10X3X6mm
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    Mouser Electronics 67B3G3006010010R0B
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    1001RB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1001RBN

    Contextual Info: ADVANCED P ow er Te c h n o l o g y 1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN


    OCR Scan
    apt1001rbn1001rbno-247ad PDF

    1001RBVFR

    Abstract: 1001RBV 1001rb
    Contextual Info: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    1001rbvfro-247apt1001rbvfro-247ad+21001rbv1001rb PDF

    Contextual Info: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


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    apt1001r1bnapt1001r3bn1001rbn1001r3bn+3150voltageapt1001r1/1001r3bno-247ad PDF

    APT901RBN

    Abstract: APT1001RBN 1001RBN APT5030BN
    Contextual Info: D TO-247 G 1001RBN 1000V 11.0A 1.00Ω S POWER MOS IV 21.0A 0.30Ω APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original
    o-247apt1001rbnapt5030bn1001rbn+2o-247adapt901rbn PDF

    1001RBN

    Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN
    Contextual Info: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original
    o-247apt1001r1bnapt1001r3bn1001rbn+31001r3bno-247ad1001rb PDF