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    Microchip Technology Inc APT1001RBVFRG

    - Rail/Tube (Alt: APT1001RBVFRG)
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    Avnet Americas APT1001RBVFRG Tube 26 Weeks 40
    • 1 -
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    • 100 $14.28
    • 1000 $13.21
    • 10000 $13.21
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    Mouser Electronics APT1001RBVFRG 30
    • 1 $15.32
    • 10 $15.32
    • 100 $13.23
    • 1000 $12.76
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    Newark APT1001RBVFRG Bulk 250
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    • 1000 $12.76
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    Microchip Technology Inc APT1001RBVFRG Tube 158 26 Weeks
    • 1 $15.32
    • 10 $15.32
    • 100 $13.23
    • 1000 $12.14
    • 10000 $11.74
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    Richardson RFPD APT1001RBVFRG 40
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    • 100 $14.20
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    Avnet Silica APT1001RBVFRG 28 Weeks 1
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    EBV Elektronik APT1001RBVFRG 27 Weeks 1
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    Master Electronics APT1001RBVFRG 40
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    • 10 $15.28
    • 100 $12.91
    • 1000 $12.39
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    Microchip Technology Inc APT1001RBVRG

    - Rail/Tube (Alt: APT1001RBVRG)
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    Avnet Americas APT1001RBVRG Tube 20 Weeks 40
    • 1 -
    • 10 -
    • 100 $13.12
    • 1000 $12.14
    • 10000 $12.14
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    Mouser Electronics APT1001RBVRG
    • 1 $14.08
    • 10 $14.08
    • 100 $12.16
    • 1000 $11.72
    • 10000 $11.72
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    Newark APT1001RBVRG Bulk 250
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    • 1000 $11.43
    • 10000 $11.43
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    Microchip Technology Inc APT1001RBVRG Tube 20 Weeks
    • 1 $14.08
    • 10 $14.08
    • 100 $12.16
    • 1000 $11.15
    • 10000 $10.79
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    Richardson RFPD APT1001RBVRG 40
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    • 100 $13.04
    • 1000 $13.04
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    Avnet Silica APT1001RBVRG 22 Weeks 1
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    EBV Elektronik APT1001RBVRG 21 Weeks 1
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    Master Electronics APT1001RBVRG
    • 1 -
    • 10 $13.64
    • 100 $11.57
    • 1000 $11.15
    • 10000 $11.15
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    Microsemi Corporation (now Microchip) APT1001RBVRG

    Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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    Vyrian APT1001RBVRG 879
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    Microsemi Corporation (now Microchip) APT1001RBVFRG

    Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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    Vyrian APT1001RBVFRG 316
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    1001RBV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1001RBVFR

    Abstract: 1001RBV 1001rb
    Contextual Info: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		1001rbvfro-247apt1001rbvfro-247ad+21001rbv1001rb PDF