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    Microchip Technology Inc APT1001RBVFRG

    MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 11A Continuous Drain (Id) @ 25°C - 1 Ohm @ 5.5A 10V - TO-247-3 Package - Through Hole.
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    Master Electronics APT1001RBVFRG 40
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    Avnet Americas APT1001RBVFRG Tube 26 Weeks 40
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    • 100 $14.28
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    Mouser Electronics APT1001RBVFRG 30
    • 1 $15.32
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    • 100 $13.23
    • 1000 $12.76
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    Newark APT1001RBVFRG Bulk 250
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    Microchip Technology Inc APT1001RBVFRG Tube 158 26 Weeks
    • 1 $15.32
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    • 100 $13.23
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    Richardson RFPD APT1001RBVFRG 40
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    Avnet Silica APT1001RBVFRG 28 Weeks 1
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    EBV Elektronik APT1001RBVFRG 27 Weeks 1
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    Microsemi Corporation (now Microchip) APT1001RBVFRG

    Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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    Vyrian APT1001RBVFRG 316
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    1001RBVFR Datasheets Context Search

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    1001RBVFR

    Abstract: 1001RBV 1001rb
    Contextual Info: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		1001rbvfro-247apt1001rbvfro-247ad+21001rbv1001rb PDF