5022BN Search Results

5020BN

Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
Contextual Info: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U 5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN

Contextual Info: A d van ced P o w er Te c h n o l o g y O D Ô APT5020BNR 5022BNR S 500V 28.0A 0.20Q 500V 27.0A 0.220 POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS V GS GSM ^ @ Tc A P T 50 22B N R U N IT

IC38C43

Abstract: IC5021
Contextual Info: General Description Features The MIC5022 half-bridge MOSFET driver is designed to operate at frequencies up to 100kHz and is an ideal choice for high speed applications such as motor control and SMPS switch mode power supplies . • • • • • • •

APT5020BNR

Abstract: APT5022BNR
Contextual Info: O D O S A d va n ced P o w er Te c h n o l o g y * APT5020BNR 5022BNR POWER MOS IV‘ 500V 28.0A 0.2011 500V 27.0A 0.22£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd ' dm VGS V GSM PD

Contextual Info: A dvanced P ow er Te c h n o lo g y • APT5020BNFR 5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

APT5020BNR

Contextual Info: A dvanced ro w er Te c h n o l o g y APT5020BNR 500V 28.0A 0.2012 5022BNR 500V 27.0A 0.2212 O D O S lib 'W tR m o s m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

2091J

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5020BNR 500V 28.0A 0.200 5022BNR 500V 27.0A 0.22Q O S POWER MOS IVe AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

APT5022BNFR

Abstract: APT5020BNFR 5022BNF
Contextual Info: ADVANCED POWER Te c h n o l o g y APT5020BNFR 5022BNFR POWER MOS IV® 500V 500V 28A 27A 0.20Q 0.22Í2 AVALANCHE RATED FREDFET N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT5022BNFR

Abstract: APT5020BNFR APT5020 sv 4380 DDD1470 5022BN 5022B
Contextual Info: A d van ced P o w er T e c h n o l o g yr APT5020BNFR 5022BNFR POWER MOS IV' 500V 500V 28A 0.20Í2 27A 0.22Q AVALANCHE RATED FREDFET N-C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd *DM V GS V GSM Parameter TJ’"I STG

Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S 5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN

5020BN

Abstract: 5022BN sml5022bn
Contextual Info: — SEHELAB PLC bOE 1> • Ô1331Ô7 = rr= ÜGGübSM 1 7 T « S I I L B MOS POWER 4 “ im ” SEME LAB 5022BN 500V 27.0A 0.2212 N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

5020bn

Abstract: APT5020BN 5020B APT 5020BN APT5022BN N mos 100v 100A
Contextual Info: D TO-247 G S POWER MOS IV APT5020BN 500V 28.0A 0.20Ω 5022BN 500V 27.0A 0.22Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APTS022BNF

Abstract: APTS020BNF
Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y L.3E D • G E S ? 1^ 0 0 0 1 1 2 3 G2fl H A V P A d van ced P o w er Tec h n o lo g y APT5020BNF 500V 28A 0.20Í2 5022BNF 500V 27A 0.22Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

APT 5020BN

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT5020BN 500V 28.0A 0.20Í1 5022BN 500V 27.0A 0.22Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

Contextual Info: A d v a n ced P o w er Te c h n o l o g y * APT5020BNF 500V 28A 0.20Q 5022BNF 500V 27A 0.22Q FAST RECOVERY MOSFET FAMILY POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS M A X IM U M R A T IN G S All Ratings: T c = 2 5 °C unless otherwise specified.

5020B

Contextual Info: A d v a n ced P o w er Te c h n o l o g y ' Q D O APT5020BN 500V 28.0A 0.200 5022BN 500V 27.0A 0.22Q S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V All Ratings: Tc = 25°C unless otherwise specified. P aram eter

Contextual Info: • r ADVANCED W .^ A P o w e r M Te c h n o lo g y APT5020BNFR 500V 28A 0.200 5022BNFR 500V 27A 0.2212 I s P 'J F t R M O S AVALANCHE RATED FREDFET P ® N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.