APT5020 Search Results

Contextual Info: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5020BLC

Contextual Info: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and

Contextual Info: APT5020SVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 500V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R A dvanced W .\A APT5020BVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

5020BN

Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
Contextual Info: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U APT5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN

APT502

Contextual Info: A d van ced P o w er Te c h n o l o g y APT5020BVFR 500V POWER MOS V 26A 0.200& l! F R E D F E T Power MOS Vi sa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: A d van ced P o w er Te c h n o l o g y O D Ô APT5020BNR APT5022BNR S 500V 28.0A 0.20Q 500V 27.0A 0.220 POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS V GS GSM ^ @ Tc A P T 50 22B N R U N IT

Contextual Info: • R ADVANCED W .\A APT5020SVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5020

Abstract: APT5020JN APT5020JN APT
Contextual Info: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE

TO-247 Package

Contextual Info: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,

Contextual Info: APT5020BFLC 500V POWER MOS VITM 26A 0.200W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

APT5020BNR

Abstract: APT5022BNR
Contextual Info: O D O S A d va n ced P o w er Te c h n o l o g y * APT5020BNR APT5022BNR POWER MOS IV‘ 500V 28.0A 0.2011 500V 27.0A 0.22£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd ' dm VGS V GSM PD

Contextual Info: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT5020BVR A dvanced P o w er T e c h n o lo g y ' so o v 26a 0.200a POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT5020BNR

Contextual Info: A dvanced ro w er Te c h n o l o g y APT5020BNR 500V 28.0A 0.2012 APT5022BNR 500V 27.0A 0.2212 O D O S lib 'W tR m o s m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT5020SVR 500V 26A 0.200Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

2091J

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT5020BNR 500V 28.0A 0.200 APT5022BNR 500V 27.0A 0.22Q O S POWER MOS IVe AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: • R A dvan c ed r M po w er APT5020SVR Te c h n o lo g y soov 26a 0.200Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5022BNFR

Abstract: APT5020BNFR 5022BNF
Contextual Info: ADVANCED POWER Te c h n o l o g y APT5020BNFR APT5022BNFR POWER MOS IV® 500V 500V 28A 27A 0.20Q 0.22Í2 AVALANCHE RATED FREDFET N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

APT5022BNFR

Abstract: APT5020BNFR APT5020 sv 4380 DDD1470 5022BN 5022B
Contextual Info: A d van ced P o w er T e c h n o l o g yr APT5020BNFR APT5022BNFR POWER MOS IV' 500V 500V 28A 0.20Í2 27A 0.22Q AVALANCHE RATED FREDFET N-C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd *DM V GS V GSM Parameter TJ’"I STG

APT5020HJN

Contextual Info: A dvanced P ow er Te c h n o lo g y 9 OD G1 O J oJ APT5020HJN Q 'j 500V 28.0A 0.200 5 Û " I I L Recognized" File No. E145592 S ISOTOP1 POWER MOS IV< HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A XIM U M R A T IN G S

Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S APT5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®