APT5010 Search Results

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5010LVR

Abstract: apt5010l
Contextual Info: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT5010

Abstract: APT5010LFLL
Contextual Info: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT5010JLL

Contextual Info: APT5010JLL 500V 41A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT5010JLL 500V 40A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

MOS 4362

Contextual Info: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT5010JVR

Contextual Info: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation · Direct mounting to heatsink isolated package · Low junction to case thermal resistance · Very rugged · Low profile D G Application

ls 7400 n

Contextual Info: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

25C2240

Abstract: APT5010JFLL
Contextual Info: APT5010JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT5010JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon

Contextual Info: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

Contextual Info: APT5010JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100m max @ Tj = 25°C ID = 41A @ Tc = 25°C Features  Power MOS 7® MOSFETs - Low RDSon

5010JN

Abstract: APT5010 5012JN APT 5060
Contextual Info: A D VA N CED PO W ER Te c h n o lo g y APT5010JN APT5012JN ISOTOP* 500V 500V 48.0 A 0.10Q 43.0 A 0.12Q S W 'U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: APT5010JVFR A dvanced P ow er Te c h n o lo g y ' 500V 44A 0.100a POWER MOS V FREDFET P m Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT5010B2LL

Abstract: APT5010LLL
Contextual Info: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT5010JLLU2

Abstract: ISOTOP apt5010
Contextual Info: APT5010JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

ISOTOP

Abstract: APT5010JVRU3
Contextual Info: APT5010JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon

Contextual Info: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: APT5010LFLC 47A 0.100 W 500V POWER MOS VITM FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: APT5010JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

APT5010JFLL

Contextual Info: APT5010JFLL 500V 44A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: APT5010JVFR 44A 0.100Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT5010B

Contextual Info: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™