5012JN Search Results

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

Contextual Info: A dvanced P o w er Te c h n o lo g y * 5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN 5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a 5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd

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Abstract: lg ds 325
Contextual Info: A dvanced P o w er Te c h n o lo g y 5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k 5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

5010JN

Abstract: APT5010 5012JN APT 5060
Contextual Info: A D VA N CED PO W ER Te c h n o lo g y APT5010JN 5012JN ISOTOP* 500V 500V 48.0 A 0.10Q 43.0 A 0.12Q S W 'U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

5012JN

Abstract: APT5012JNU3 APTS012JNU3 APT5012
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m 5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T

APT5012JNU3

Contextual Info: A dvanced P o w er Te c h n o l o g y ' -O A 5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified.

APT5010

Abstract: LD 1170
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT5010JN 5012JN S ISOTOP 500V 500V 48.0A 0.1 Oí2 43.0A 0.1 2Ü. "UL Recognized" File No. E145592 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol APT 5010UN APT

APT5010JN

Abstract: APT5010 5012JN APT5012JN 5010J
Contextual Info: S S D D G G 27 2 T- SO APT5010JN 5012JN S ISOTOP 48.0A 0.10Ω 43.0A 0.12Ω 500V 500V "UL Recognized" File No. E145592 S POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

APT5012JNU2

Abstract: ST-200 transformer DIODE BAT 17
Contextual Info: A d van ced R o w er Te c h n o l o g y 5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m