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NPT100 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NPT1004D		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 45W DC-4GHZ 8SOIC	Original	PDF	535.67KB
NPT1007B		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - TRANSISTOR GAN DC-1200MHZ 200W	Original	PDF	1.01MB

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Festo GRE-1/4-NPT (10058) FLOW CONTROL/SILENCER, EXH AIR, 1/4NPT, 0-10 BAR
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RS	GRE-1/4-NPT (10058)	Bulk	6	3 Weeks	1	1 $31.55 10 $31.55 100 $31.55 1000 $31.55 10000 $31.55	Buy Now
Pass & Seymour PS460C9WNPT100 PS460C9W W/ 1" LTF NO CORD CLAMP
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RS	PS460C9WNPT100	Bulk		8 Weeks	1	1 $670.30 10 $670.30 100 $670.30 1000 $670.30 10000 $670.30	Get Quote
Pass & Seymour PS560P6WNPT100 PS560P6W W/ 1" LTF NO CORD CLAMP
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RS	PS560P6WNPT100	Bulk		8 Weeks	1	1 $639.59 10 $588.43 100 $588.43 1000 $588.43 10000 $588.43	Get Quote
Pass & Seymour PS560C9WNPT100 PS560C9W W/ 1" LTF NO CORD CLAMP
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RS	PS560C9WNPT100	Bulk		8 Weeks	1	1 $697.26 10 $697.26 100 $697.26 1000 $697.26 10000 $697.26	Get Quote
Festo GRE-1/8-NPT (10057) FLOW CONTROL/SILENCER, EXH AIR, 1/8NPT, 0-10 BAR
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RS	GRE-1/8-NPT (10057)	Bulk			1	1 $28.46 10 $28.46 100 $28.46 1000 $28.46 10000 $28.46	Get Quote

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NPT100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPT1007 Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99 Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	npt1007 1200mhz 900mhz 500-1000mhz +12ad-014 ear99 1400ma1 nds-012 2305 transistor transistor a114 npt1007b 200w push-pull 1000v 200w transistor c101 transistor transistor c101 transistor equivalent table c101	PDF
Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance	Original	npt1004 2500mhz ear99 4000mhz +2400ma nds-010	PDF
NPT100 Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance	Original	npt1004 2500mhz ear99 4000mhz +3400ma nds-010 npt100	PDF
NPT1004 Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz Contextual Info: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz	Original	npt1004 2500mhz ear99 4000mhz +10400ma nds-010 npt1004dr npt1004dt npt1004d j-162 25001-2 jesd22-a113 jesd22-a114 2500-2700mhz	PDF
ATC100B101JW500X Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S Contextual Info: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected	Original	ad-014 npt1007 1000mhz 700ma +10apb08-132 atc100b101jw500x cap1206 res1210 atc100b2r0gw500x 12061c103kat2a atc100b dta183 res2512 elxy630ell271mk25s	PDF
TRANSISTOR J15 Abstract: PIMD3 Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	npt1007 1200mhz 900mhz 500-1000mhz +6ad-014 ear99 1400ma1 nds-012 transistor j15 pimd3	PDF
PIMD3 Abstract: npT1007 TRANSISTOR J15 Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	npt1007 1200mhz 900mhz 500-1000mhz +6ad-014 ear99 1400ma1 nds-012 pimd3 transistor j15	PDF
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	nptb00004 po150s npt25015 npt35015 +9npt1012 2xnpt25100 npt1004 nptb00025 npt1010 nptb00050 ac200b npt1007 npt25100	PDF
NPT25100 Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader	Original	nptb00004 po150s 99ghz 17ghz +11-35dbc npt25015 npt25100 800-1000mhz nptb00025 npt1007 nptb00050 npt1004 npt1005 npt35015 ac360p	PDF
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	nptb00004 po150s npt25015 npt1012 +7gan amplifier 100w gan on silicon transistor nptb00025 npt1007 gan amplifier npt1004 gan on silicon substrate	PDF
NPTB00004 Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012 Contextual Info: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-012 64-qam nptb00004 npt25015 +7ofdm equations npt1004 npt35015 nitron npt25100 transistor study nptb00025	PDF