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    PIMD3 Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PIMD3
    		NXP Semiconductors PIMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN/PNP ; Ptot max: 300 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF 1.01MB 18
    PIMD3
    		Philips Semiconductors TRANS DIGITAL BJT COMPLEMENTARY 50V 100MA 6SOT457 T/R Original PDF 57.28KB 11
    PIMD3,115
    		NXP Semiconductors PIMD3 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal Original PDF 1.01MB 18
    PIMD3115
    		NXP Semiconductors PIMD3 - NPN/PNP RESISTOR-EQUIPPE Original PDF 1.72MB
    PIMD3,115
    		NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN/PNP ; Ptot max: 300 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT457 (SC-74); Container: Tape reel smd Original PDF 107.34KB 11
    PIMD3F
    		Nexperia USA Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - PIMD3/SOT457/SC-74 Original PDF 1.61MB
    PIMD3T/R
    		NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN/PNP ; Ptot max: 300 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF 107.34KB 11
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    PIMD3 Price and Stock

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    Nexperia PIMD3,115

    Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME PIMD3,115 1
    • 1 $0.26
    • 10 $0.19
    • 100 $0.17
    • 1000 $0.11
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    Avnet Americas PIMD3,115 Tape & Reel 53 Weeks, 1 Days 15,000
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    Mouser Electronics PIMD3,115
    • 1 $0.45
    • 10 $0.31
    • 100 $0.19
    • 1000 $0.11
    • 10000 $0.09
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    Newark () PIMD3,115 Tape & Reel 100
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    • 100 $0.15
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    PIMD3,115 Cut Tape 5
    • 1 -
    • 10 $0.21
    • 100 $0.15
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    Bristol Electronics PIMD3,115 2,988
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    Chip 1 Exchange PIMD3,115 7,800
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    Avnet Asia PIMD3,115 30 Weeks 15,000
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    Avnet Silica PIMD3,115 32 Weeks 3,000
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    Nexperia PIMD3F

    Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-457 T/R - Tape and Reel (Alt: PIMD3F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PIMD3F Tape & Reel 53 Weeks, 1 Days 20,000
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    Chip 1 Exchange PIMD3F 60,000
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    Vyrian PIMD3F 7,909
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    Nexperia PIMD3-QX

    PIMD3-Q/SOT457/SC-74 /12NC:934669421115 - Tape and Reel (Alt: PIMD3-QX)
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    Avnet Americas PIMD3-QX Tape & Reel 15,000
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    Nexperia PIMD3-QF

    PIMD3-Q/SOT457/SC-74 /12NC:934669421135 - Tape and Reel (Alt: PIMD3-QF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PIMD3-QF Tape & Reel 20,000
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    Philips Semiconductors PIMD3-115

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc PIMD3-115 2,800
    • 1 $0.46
    • 10 $0.46
    • 100 $0.35
    • 1000 $0.30
    • 10000 $0.30
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    Find more PIMD3 price and stock on Findchips.com

    PIMD3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    14517

    Abstract: PIMD3 M7 marking codes PEMB11 PEMH11 PUMB11 PUMH11 marking code D3 SOT457 PEMD3/DG PEMB1
    Contextual Info: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Rev. 09 — 18 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET . Table 1: Product overview Type number Package


    Original     		ot666pemb11pemh11ot457+11sc-74ot363sc-88pumb11pumh1114517pimd3m7 marking codesmarking code d3 sot457pemd3/dgpemb1 PDF

    pumd3 sot363

    Abstract: PEMB11 PEMH11 PUMB11 PUMH11 marking code D3 SOT457 PIMD3 PEMB1
    Contextual Info: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Rev. 10 — 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number


    Original     		ot666pemb11pemh11ot457+9sc-74ot363sc-88pumb11pumh11pumd3 sot363marking code d3 sot457pimd3pemb1 PDF

    PIMD3

    Abstract: PEMB1
    Contextual Info: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 11 — 25 September 2013 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic


    Original     		ot666ot457ot363sc-74+8sc-88pemb11pumb11pemh11pumh11aec-q101pimd3pemb1 PDF

    PIMD3

    Contextual Info: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Rev. 10 — 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET . Table 1. Product overview Type number


    Original     		ot666pemb11pemh11ot457+6sc-74ot363sc-88pumb11pumh11pimd3 PDF

    marking code D3 SOT457

    Abstract: SC-74 marking code D3 13294 marking code D3 SC-88 PIMD3 PEMB1
    Contextual Info: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Rev. 08 — 6 December 2004 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Type number Package


    Original     		ot666ot457ot363sc-74+11sc-88pemb11pumb11pemh11pumh11marking code d3 sot457sc-74 marking code d313294marking code d3 sc-88pimd3pemb1 PDF

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


    Original     		2002/95/ecpmbta42pmeg3005elpmeg6010ep+16pmr780snptvs12vs1urpzu13ypmbta42dspmeg3005etpmeg6010erprtr5v0u6scsp1040tssop20 footprintip4065cx11smd transistor gy sot89ip4065cx11/lfbv 9y transistor smdip4058cx8/lfip4280cz10smd transistor gy PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		ot363sc-88lpc2148 i2cbgb210s+8lpc2148 interfacing 2.8" tft lcd displaybgb210embedded c code to interface lpc2148 with sensorbgw200tda8932ttda8920bjnxp pn531tda8947j equivalent PDF

    PIMD3

    Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		npt35050a3a001b750mands-003+1pimd3 PDF

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 panasonic vf 200 inverter manual PLT-16 panasonic TV tuner VF0 Panasonic inverter MN101C c compiler
    Contextual Info: MICROCOMPUTER MN101C MN101C46F/F46F LSI User’s Manual Pub.No.21446-021E “PanaXSeries” is a trademark of Matsushita Electric Inustrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of


    Original     		mn101cmn101c46f/f46f21446-021epanasonic inverter manual vf 200+6panasonic inverter manual vf 100panasonic vf 200 inverter manualplt-16panasonic tv tunervf0 panasonic invertermn101c c compiler PDF

    NPT1007

    Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
    Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature


    Original     		npt10071200mhz900mhz500-1000mhz+12ad-014ear991400ma1nds-0122305 transistortransistor a114npt1007b200w push-pull1000v 200w transistorc101 transistortransistor c101transistor equivalent table c101 PDF

    Transistor SMD SOT363 SC70

    Abstract: Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC SOT343R reset transistor SOT363 PBLS4004Y BFG310W/XR PBLS4003V RF SMD transistors pnp
    Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 4 In this issue: P 1 PIP212-12M Integrated DC/DC converter powertrain solution • ISSUE 1 MARCH 2005 ■ Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights.


    Original     		pip212-12mbcm847bsbcm857bspbls15xx+13pbls40xxp89lpc9102p89lpc9103transistor smd sot363 sc70transistor smd sot363 sc70 sc88transistor smd code package sot363dmx decoder icsot343r resettransistor sot363pbls4004ybfg310w/xrpbls4003vrf smd transistors pnp PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		dfn1006d-2od882ddfn1010d-3ot1215+16dfn2020md-6ot1220dfn1608d-2od1608dsn0603od962circuit diagram wireless spy camerapdtb123yip4303cx4dual cc baw623267 tsop6pcmf2dfn1bst60pumd4pdtb123epdta143 PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		npt251002700mhz10mhzear99+10nds-001npt25100bgan on silicon substrategan on silicon transistornpt25015ecj5yb2a105matc600fatc100b1r2btac780bm-f2gan transistor PDF

    PIMD3

    Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		npt35050a3a001b750mands-003+1pimd3 PDF

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


    Original     		1n41481n45311n47xxa1ps10sb62+161ps10sb631ps10sb821ps1811ps1841ps1931ps226buk2114buk2114-50sytssaa7117saa7136empsa92 168saa7136buk2914-50sytstda8920bthbu4508dxkmz52 PDF

    PIMD3

    Contextual Info: BGS22WL10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.6 - May 27, 2014 Power Management & Multimarket Edition May 27, 2014 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG All Rights Reserved.


    Original     		bgs22wl10tslp-10-1-potslp-10-1tslp-10-1-fp+2tslp-10-1-tppimd3 PDF

    PIMD3

    Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		nptb000042500mhzear996000mhz+2nds-002pimd3 PDF

    PIMD3

    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		npt251002700mhz10mhz3a982+2nds-001pimd3 PDF

    NPT25100

    Abstract: PIMD3
    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		npt251002700mhz10mhz3a982+2nds-001pimd3 PDF

    panasonic inverter manual vf 200

    Abstract: panasonic inverter manual vf 100 panasonic vf 200 inverter manual VF0 Panasonic inverter MN101C c compiler panasonic TV tuner MN101 DA am/nais inverter vf 7f operation manual
    Contextual Info: MICROCOMPUTER MN101C MN101C46F/F46F LSI User’s Manual Pub.No.21446-0211E “PanaXSeries” is a trademark of Matsushita Electric Inustrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of


    Original     		mn101cmn101c46f/f46f21446-0211epanasonic inverter manual vf 200+7panasonic inverter manual vf 100panasonic vf 200 inverter manualvf0 panasonic invertermn101c c compilerpanasonic tv tunermn101da am/nais inverter vf 7f operation manual PDF

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


    Original     		ot1061ot1118pssi2021sayptvs10vp1up+10transistor s1a 64 smdssop14 land patternip4065cx11kys 30-404440 ic 5.1 audio amplifier boardnx1117phd78nq1n4148 sod323 t4nx1117i33zpmeg3030 PDF

    PIMD3

    Contextual Info: BGS22W2L10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.4 - October 12, 2012 Power Management & Multimarket Edition October 12, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG


    Original     		bgs22w2l10tslp-10-1-potslp-10-1tslp-10-1-fp+2tslp-10-1-tppimd3 PDF

    PIMD3

    Contextual Info: BGS14AN16 RF SP4T Switch Data Sheet Revision 1.0, 2012-12-17 Power Management & Multimarket Edition December 17, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.


    Original     		bgs14an16tsnp-16-6pimd3 PDF

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


    Original     		od323sc-76od882dod882+11od123f2n7002 nxp markingtl431 transistor 139 etcd player amplifier double ic 4440bcm 4709sot1194ssop14 land patternip4065cx11pmv27uptransistor smd code package sot89 gyip4058cx8/lf PDF