ECJ5YB2A105M Search Results

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

NPTB00025

Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Contextual Info: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

Contextual Info: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life

IRF7832

Abstract: IR2085S IRDC2085S-S PCC2224CT-ND bav16wdict zener db3 IRDC2085S-DF IRF7380 zener diode db2 IRF9956
Contextual Info: IRDC2085S-S DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC

NPT25100

Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

Contextual Info: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ • Features ■ Recommended Applications ● Small size and wide capacitance range ● High humidity characteristic and long life ● Low inductance (ESL) and excellent frequency

PIMD3

Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

NPT25100

Abstract: PIMD3
Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

IR2086S

Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
Contextual Info: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC

NPT25015

Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
Contextual Info: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP

NPT35015

Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power

Contextual Info: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks

NPT25015DT

Abstract: NPT25015DR
Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP

ECJ1VC2A100D

Contextual Info: Multilayer Ceramic Capacitors 100V, 200V Series Multilayer Ceramic Capacitors (100V, 200V Series) Series: ECJ • Features ■ Recommended Applications ■ Handling Precautions ■ Packaging Specifications ● Small size and wide capacitance range ● High humidity resistance and long life

Contextual Info: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks

NPTB00050

Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
Contextual Info: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from

NPTB00050B

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power

IR2085S

Abstract: IRF7832 PCC2224CT-ND synchronous rectifier Zener Diode SOD323 IRDC2085S-DF IRF6603 IRF7380 IRF7493 IRF9956
Contextual Info: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC

30Vn

Abstract: zener diode db2 CAP 22u 1210 digi-key PQ TRANSFORMER IR2085S irf7832 RG2 DIODE IR2085 PCC2224CT-ND
Contextual Info: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC

ECJ3YB2A104

Contextual Info: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life