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    3A982 Search Results

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    3A982 Price and Stock

    TDK Electronics

    TDK Electronics B43763A9828M608

    SCREW TERMINALS 8200UF 400V
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    DigiKey B43763A9828M608 Bulk 32
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    TDK Electronics B43643A9827M057

    CAP ALUM 820UF 20% 400V SNAP TH
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    DigiKey B43643A9827M057 Bulk 320
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    TDK Electronics B43523A9827M000

    CAP ALUM 820UF 20% 400V SLD LUG
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    DigiKey B43523A9827M000 Bulk 144
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    TDK Electronics B43743A9828M007

    CAP ALUM 8200UF 20% 400V SCREW
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    DigiKey B43743A9828M007 Bulk 32
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    TDK Electronics B43743A9828M000

    CAP ALUM 8200UF 20% 400V SCREW
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    3A982 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original
    NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 PDF

    ear99

    Abstract: x-band mmic core chip KHPA0618-30W hmc469 HMCAD1512
    Contextual Info: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,


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    OC-48 SG-0514 ear99 x-band mmic core chip KHPA0618-30W hmc469 HMCAD1512 PDF

    EAR99

    Abstract: hmc921 HMC245 hmc597 HMC767 hmc208
    Contextual Info: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,


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    OC-48 SG-0914 EAR99 hmc921 HMC245 hmc597 HMC767 hmc208 PDF

    PIMD3

    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


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    NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 PDF

    NPT25100

    Abstract: PIMD3
    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


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    NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 PDF

    LTTS e3

    Abstract: gbs transistors
    Contextual Info: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,


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    3A001 3A002, LTTS e3 gbs transistors PDF

    NPTB00050B

    Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original
    NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B PDF