NPTB00050 Search Results

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

NPTB00050

Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
Contextual Info: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from

NPTB00050B

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

NPTB000050

Abstract: NPTB00050 an-004 nitronex Nitron AN 004 nitronex vswr application
Contextual Info: Application Note AN-004 VSWR Testing of NPTB00050 Introduction This application note describes VSWR stress testing of the NPTB00050 device operated at P3dB and being subjected to 10:1 and 20:1 VSWR conditions at both room temperature and at an elevated flange temperature of

NPTB00004

Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for

NPT25100

Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader

NPTB0004

Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2

GaN amplifier temperature compensation

Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
Contextual Info: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents

NPTB00004

Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2

NPTB0004

Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and

NPTB00004

Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
Contextual Info: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2