NPTB0004 Search Results

Contextual Info: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%

NPTB0004

Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2

NPTB0004

Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and

Contextual Info: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%