NPT1007
Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature
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npt10071200mhz900mhz500-1000mhz+12ad-014ear991400ma1nds-0122305 transistortransistor a114npt1007b200w push-pull1000v 200w transistorc101 transistortransistor c101transistor equivalent table c101
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ATC100B101JW500X
Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
Contextual Info: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected
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ad-014npt10071000mhz700ma+10apb08-132atc100b101jw500xcap1206res1210atc100b2r0gw500x12061c103kat2aatc100bdta183res2512elxy630ell271mk25s
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TRANSISTOR J15
Abstract: PIMD3
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature
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PIMD3
Abstract: npT1007 TRANSISTOR J15
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature
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npt10071200mhz900mhz500-1000mhz+6ad-014ear991400ma1nds-012pimd3transistor j15
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NPTB00004
Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for
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NPT25100
Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader
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NPTB00004
Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.
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nptb00004po150snpt25015npt1012+7gan amplifier 100wgan on silicon transistornptb00025npt1007gan amplifiernpt1004gan on silicon substrate
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