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NPT1012 Datasheets (1)

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M/A-Com

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NPT1012B		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ	Original	PDF	1.01MB

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Amphenol Lutze


Amphenol Lutze LMNPT1012 METAL LOCKNUT; NPT THREAD; NPT 1 "; BRASS-NICKEL PLATED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LMNPT1012	Bulk			1	1 $20.06 10 $19.06 100 $18.46 1000 $18.46 10000 $18.46	Get Quote
Interstate Connecting Components	LMNPT1012					1 - 10 - 100 - 1000 - 10000 -	Buy Now

NPT1012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPT1012 Abstract: NPT1012B AC200BM-F2 AC200B Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in	Original	npt1012 dc-4000mhz 3000mhz 0-25w +81000-2500mhz 2-20w 30-1000mhz ear99 225ma npt1012b ac200bm-f2 ac200b	PDF
Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	npt1012 dc-4000mhz 3000mhz 6-20w +51000-2500mhz 0-20w 30-1000mhz ear99 225ma	PDF
Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in	Original	npt1012 dc-4000mhz 3000mhz 6-20w +51000-2500mhz 0-20w 30-1000mhz ear99 225ma	PDF
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	nptb00004 po150s npt25015 npt35015 +9npt1012 2xnpt25100 npt1004 nptb00025 npt1010 nptb00050 ac200b npt1007 npt25100	PDF
Avago 9886 Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes Contextual Info: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8	Original	com/peixun/antenna/116 //shop36920890 avago 9886 xfrv +6ne3210 fr4 substrate height and thickness rogers fll120 skd-ons-st23-001 bfp949 rohm diodes	PDF
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	nptb00004 po150s npt25015 npt1012 +7gan amplifier 100w gan on silicon transistor nptb00025 npt1007 gan amplifier npt1004 gan on silicon substrate	PDF