Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPT1012B Search Results

    NPT1012B Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NPT1012B
    		M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ Original PDF 1.01MB
    SF Impression Pixel

    NPT1012B Price and Stock

    Select Manufacturer

    MACOM NPT1012B

    RF MOSFET HEMT 28V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NPT1012B Tray 30
    • 1 -
    • 10 -
    • 100 $178.76
    • 1000 $178.76
    • 10000 $178.76
    		Buy Now
    Mouser Electronics NPT1012B 14
    • 1 $222.51
    • 10 $189.64
    • 100 $189.64
    • 1000 $189.64
    • 10000 $189.64
    		Buy Now
    Richardson RFPD NPT1012B 30
    • 1 -
    • 10 -
    • 100 $150.52
    • 1000 $150.52
    • 10000 $150.52
    		Buy Now

    Nitronex NPT1012B

    Transistors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NPT1012B 1,417
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NPT1012B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPT1012

    Abstract: NPT1012B AC200BM-F2 AC200B
    Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in


    Original     		NPT1012 DC-4000MHz 3000MHz 0-25W 1000-2500MHz 2-20W 30-1000MHz EAR99 3000MHz) 225mA, NPT1012B AC200BM-F2 AC200B PDF

    Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in


    Original     		NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA, PDF

    Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in


    Original     		NPT1012 DC-4000MHz 3000MHz 6-20W 1000-2500MHz 0-20W 30-1000MHz EAR99 3000MHz) 225mA, PDF