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    NPT25015D Search Results

    NPT25015D Datasheets (1)

    M/A-Com
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NPT25015D
    M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 23W DC-3GHZ 8SOIC Original PDF 1.08MB
    SF Impression Pixel

    NPT25015D Price and Stock

    MACOM

    MACOM NPT25015D

    HEMT N-CH 28V 23W DC-3GHZ 8SOIC
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    Richardson RFPD NPT25015D 95
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    NPT25015D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Contextual Info: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original
    npt250152500-2700mhzear99200ma+72500mhznds-004npt25015djesd22-a114jesd22-a115app-npt25015-25npt25015dt PDF

    Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original
    npt250152500-2700mhzear99200ma+22500mhznds-004 PDF

    NPT25015DT

    Abstract: NPT25015DR
    Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original
    npt250152500-2700mhzear99200ma+42500mhznds-004npt25015dtnpt25015dr PDF