Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    NPT25015DR Search Results

    NPT25015DR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Contextual Info: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		npt250152500-2700mhzear99200ma+72500mhznds-004npt25015djesd22-a114jesd22-a115app-npt25015-25npt25015dt PDF

    Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		npt250152500-2700mhzear99200ma+22500mhznds-004 PDF

    NPT25015DT

    Abstract: NPT25015DR
    Contextual Info: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		npt250152500-2700mhzear99200ma+42500mhznds-004npt25015dtnpt25015dr PDF