Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    NPT35015D Search Results

    NPT35015D Datasheets (2)

    MACOM
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NPT35015D
    		MACOM HEMT N-CH 28V 18W 3300-3800MHZ Original PDF 724.27KB
    NPT35015D
    		MACOM HEMT N-CH 28V 18W 3300-3800MHZ Original PDF 952.16KB
    SF Impression Pixel

    NPT35015D Price and Stock

    MACOM

    MACOM NPT35015D

    Trans FET N-CH 100V 5A T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD NPT35015D 1
    • 1 -
    • 10 -
    • 100 $48.51
    • 1000 $48.51
    • 10000 $48.51
    		Buy Now

    NPT35015D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		npt35015ear99nds-005 PDF

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		npt350156000mhzear99nds-005+7npt35015dr0435012061c103kat2ajesd22-a114jesd22-a115j146npt35015dt PDF

    Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		npt35015ear99nds-005 PDF