NPT25100B Search Results
NPT25100B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NPT25100
Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
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NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR | |
PIMD3Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power |
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NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 | |
NPT25100
Abstract: PIMD3
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NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 |