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NPT35015 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NPT35015		M/A-Com	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 18W 3300-3800MHZ	Original	PDF	714.01KB
NPT35015D		MACOM	HEMT N-CH 28V 18W 3300-3800MHZ	Original	PDF	724.27KB
NPT35015D		MACOM	HEMT N-CH 28V 18W 3300-3800MHZ	Original	PDF	952.16KB

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MACOM


MACOM NPT35015D Trans FET N-CH 100V 5A T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	NPT35015D				1	1 - 10 - 100 $48.51 1000 $48.51 10000 $48.51	Buy Now

NPT35015 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	npt35015 ear99 nds-005	PDF
NPT35015 Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power	Original	npt35015 6000mhz ear99 nds-005 +7npt35015d r04350 12061c103kat2a jesd22-a114 jesd22-a115 j146 npt35015dt	PDF
Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	npt35015 ear99 nds-005	PDF
NPTB00004 Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100 Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for	Original	nptb00004 po150s npt25015 npt35015 +9npt1012 2xnpt25100 npt1004 nptb00025 npt1010 nptb00050 ac200b npt1007 npt25100	PDF
NPT25100 Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader	Original	nptb00004 po150s 99ghz 17ghz +11-35dbc npt25015 npt25100 800-1000mhz nptb00025 npt1007 nptb00050 npt1004 npt1005 npt35015 ac360p	PDF
NPTB0004 Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015 Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-010 npt25100 nptb0004 gan amplifier 100w +7gan bias 25 watt vmos fet nptb00004 nptb00025 gan amplifier temperature compensation future scope of wimax npt25015	PDF
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	nptb00004 po150s npt25015 npt1012 +7gan amplifier 100w gan on silicon transistor nptb00025 npt1007 gan amplifier npt1004 gan on silicon substrate	PDF
NPTB0004 Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and	Original	npt25015 po150s npt251 nptb00025 +13ac200b nptb00040 ac360c nptb00050 ac360b nptb0004 nptb00004 rf power transistors npt25100 npt35015 gan on silicon transistor rf transistor selection rf transistor 2.5ghz	PDF
NPTB00004 Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012 Contextual Info: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	an-012 64-qam nptb00004 npt25015 +7ofdm equations npt1004 npt35015 nitron npt25100 transistor study nptb00025	PDF