APT12040JVR Search Results
APT12040JVR Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT12040JVR | Advanced Power Technology | POWER MOS V 1200V 26A 0.400 Ohm | Original | 209.92KB | 4 | ||
APT12040JVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 39.22KB | 2 | ||
APT12040JVR | Vermason | Static dissipative service kit | Original | 5.16KB | 1 |
APT12040JVR Price and Stock
Microchip Technology Inc APT12040JVRMOSFET N-CH 1200V 26A SOT227 |
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APT12040JVR | Tube | 34 | 1 |
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APT12040JVR | Bulk | 20 Weeks | 10 |
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APT12040JVR | Bulk | 10 |
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APT12040JVR | Tube | 20 Weeks |
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APT12040JVR | 1 |
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APT12040JVR | 10 |
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APT12040JVR | 22 Weeks | 10 |
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APT12040JVR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BD 143
Abstract: bd 426 h 033 APT12040JVR
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Original |
APT12040JVR OT-227 E145592 BD 143 bd 426 h 033 APT12040JVR | |
bd 426
Abstract: APT12040JVR
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Original |
APT12040JVR OT-227 E145592 bd 426 APT12040JVR | |
APT12040JVR
Abstract: SOT 89 RY
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APT12040JVR OT-227 APT12040JVR SOT 89 RY | |
Contextual Info: APT12040JVR A dvanced P o w er Te c h n o l o g y 1200V 26A 0.400Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT12040JVR OT-227 | |
Contextual Info: A dvanced P o w er Te c h n o lo g y A P T 12040JV R 1200V 26A 0.400Û POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
12040JV OT-227 APT12040JVR MIL-STD-750 OT-227 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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Contextual Info: • R A P T 12040 J V R A d van ced W /Æ P o w e r Te c h n o l o g y 1200V 26a 0.40012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
OT-227 APT12040JVR E145592 |