APT50M60JN Search Results

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage

Contextual Info: ADVANCED POWER L 3E D TECHNOLOGY • 0257^ QQOimQ b2s M A VP A d v a n ced P o w er Te c h n o l o g y APT50M60JNF 500V 71A 0.060Í2 ISOTOP' S tt" U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

LS 14500

Contextual Info: A d van ced P o w er Te c h n o l o g y " APT50M60JNF 500V 71A 0.060Í2 ISOTOP1 ,S M "U L Recognized" File No. E145592 S POWER MOS IVe SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

apt50m60jn

Abstract: N mos 100v 100A
Contextual Info: S S D D G G 27 2 T- SO APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.

diode sg 71A

Abstract: 50M60JN SM 71A diode
Contextual Info: o D O S A d va n ced P o w er Te c h n o l o g y 8 APT50M60JN 500V 71A 0.060Q 9 Û "U L Recognized" File No. E145592 S) ISOTOP POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D *DM’ ’lM

Contextual Info: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT 50M60JN

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

apt20m25jnr

Abstract: apt20m25
Contextual Info: W UAAdvanced PT rn ow er tiu n t nirr Table of Contents • • • • • • • • ISOTOP® Products Product Selector Guide Features/Benefits Product Datasheets US and Canadian Representative Sales Offices US and Canadian Distributor Sales Offices International Representative and Distributor Sales Offices

APT9302

Abstract: mosfet discrete totem pole drive CIRCUIT mosfet discrete totem pole CIRCUIT mosfet power totem pole CIRCUIT APT50M60JN APT5020BN MIC4429 MIC4451 UC3708 UC3710
Contextual Info: APPLICATION NOTE APT9302 By: Kenneth Dierberger GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Presented at PCIM '93 USA Presents design rules for proper design and layout of gate drive circuitry. 1 APT9302 GATE DRIVE DESIGN FOR LARGE DIE MOSFETS Kenneth Dierberger

APT8030JN

Abstract: apt20m25jnr APT8018JNFR apt10050jn APT5012 apt5010jn
Contextual Info: w!Zá A d vanced POW ER TE€2HN0L0GY' APT Product Selector Guide Rds ON (ohms) (watts) (amperes) 100 0.013 520 150 APT10M13JNR+ 4-7 200 0.025 520 100 APT20M25JNR+ 8-11 300 0.045 520 70 APT30M45JNR+ 12-15 400 0.075 0.042 520 690 56 86 APT40M75JN APT40M42JN