APT6030 Search Results

Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT6030BVFR

Abstract: APT6030SVFR
Contextual Info: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A d v a n ced P o w er Te c h n o l o g y ' APT6030BVR 600V 21A 0.300Í2 POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: • R ADVANCED W ZA P o w er Te c h n o lo g y APT6030BNR APT6033BNR GFvvER MOS l'Tiä 600V 23.0A 0.30i> 600V 22.0A 0.3312 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT6030BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)23 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)92 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)360 Minimum Operating Temp (øC)-55õ

DLS FT 031

Abstract: TL 084L APT6030BNR 25CC APT6033BNR
Contextual Info: A d van ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR Ô S POWER MOS IV® 600V 23.0A 0.30U 600V 22.0A 0.33Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT6030BNR

Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT6030BNR APT6033BNR O s 600V 23.0A 0.3012 600V 22.0A 0.33Ü POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V OSS D Continuous Drain Current @ Tc V V Parameter

Contextual Info: ADVANCED POWER TECHNOLOGY b3E 0257^01 OOOllOfi S3T A d va n ced P o w er T e c h n o lo g y 9 OD IIS la ] D I S/D APT6030HJN 600V 23.0A 0.300 "UL Recognized” File No. E14S592 S ISOTOP* POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

diode U3d

Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
Contextual Info: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: APT6030BVR APT6030SVR 600V 21A POWER MOS V MOSFET BVR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

D 92 M - 03 DIODE

Abstract: 6030bn
Contextual Info: A dvanced P ow er Te c h n o l o g y O D O APT6030BN 600V 23.0A 0.30CÌ APT6033BN 600V 22.0A 0.33ÍÍ S _ ^ _ GB WER MOS \V® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN

APT6030SN

Contextual Info: D D3PAK G APT6030SN S 600V 23.0A 0.30Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6030SN UNIT 600 Volts 23 Continuous Drain Current @ TC = 25°C

Contextual Info: APT6030BVFR APT6030SVFR 600V 21A POWER MOS V FREDFET 0.300Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

lr 2905 z

Abstract: 1S17 APT6030SN
Contextual Info: o A dvanced P o w er Te c h n o lo g y D APT6030SN O s 600V 23.0A 0.30Í2 POWER MOS IV« N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ' dm > CO O V GSM PD T J ’T STG tl All Ratings: Tc = 25°C unless otherwise specified.

6030BN

Abstract: 6033BN lr 2905 z DLS FT 031 APT6030BN APT6033BN
Contextual Info: A d v a n ced P o w er Te c h n o l o g y * O D O S POWER MOS IV APT6030BN 600V 23.0A 0.300 APT6033BN 600V 22.0A 0.33Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT

Contextual Info: A d v a n ced P o w er Te c h n o l o g y 8 O D O S POWER MOS IV APT6030BN 600V 23.0A 0.30Q APT6033BN 600V 22.0A 0.330 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 6030BN APT

Contextual Info: APT6030BVR 600V 21A 0.300Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

6030bn

Abstract: APT6030BN APT6033BN
Contextual Info: D TO-247 G S POWER MOS IV APT6030BN 600V 23.0A 0.30Ω APT6033BN 600V 22.0A 0.33Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT6030BVR

Contextual Info: APT6030BVR • R A dvanced W .\A pow er Te c h n o lo g y " 600v 21 a 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT6030BN 600V 23.0A 0.30Í1 APT6033BN 600V 22.0A 0.33Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT

Contextual Info: APT6030BVR A dvanced P o w er Te c h n o l o g y 600V 21A 0.300Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

ISOTOP

Abstract: HU49
Contextual Info: A d v an ced P o w er Te c h n o lo g y OD o J t t I S/D APT6030HJN o |^ 23.0A 0.30D 5 Û ”UL Recognized" File No. E145592 S ISOTOP OS 600V POWER MOS IV‘ HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS