IXFK35N50 Search Results

TO-264-aa

Contextual Info: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

smd diode 513

Abstract: TO-264 35n50
Contextual Info: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C

264AA

Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Contextual Info: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C

35N50

Abstract: NS4250 IXFK33N50 IXFK35N50
Contextual Info: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

35N50

Contextual Info: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXAN0009

Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
Contextual Info: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

TO-264-aa

Abstract: d2529
Contextual Info: IXYS HiPerFET IXFK 35N50 V DSS Power MOSFETs I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 35 A 0.15 Q trr <250 ns Preliminary data Symbol Test Conditions Maximum Ratings V oss Tj =25°Cto150°C 500 V VDGR T, = 25° C to 150° C; RGS= 1 M£2

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)