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Littelfuse Inc IXFX80N50P Discmosfetn-Ch Hiperfet-Polar To-247Ad/; \|Littelfuse IXFX80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFX80N50P	Bulk			300	1 - 10 - 100 - 1000 $15.28 10000 $14.45	Buy Now
RS	IXFX80N50P	Bulk		8 Weeks	30	1 - 10 - 100 $26.96 1000 $26.96 10000 $26.96	Get Quote
Littelfuse Inc IXFR80N50P Discmosfetn-Ch Hiperfet-Polar Isoplus247; \|Littelfuse IXFR80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFR80N50P	Bulk			300	1 - 10 - 100 - 1000 $19.12 10000 $17.93	Buy Now
RS	IXFR80N50P	Bulk		8 Weeks	30	1 - 10 - 100 $29.10 1000 $29.10 10000 $29.10	Get Quote
Littelfuse Inc IXFK80N50P Discmosfetn-Ch Hiperfet-Polar To-264(3)/; \|Littelfuse IXFK80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFK80N50P	Bulk			300	1 - 10 - 100 - 1000 $15.13 10000 $14.20	Buy Now
RS	IXFK80N50P	Bulk		8 Weeks	25	1 - 10 - 100 $26.15 1000 $26.15 10000 $26.15	Get Quote
Littelfuse Inc IXFN80N50P Mosfet, Module, N-Ch, 500V, 66A; Channel Type:N Channel; Continuous Drain Current Id:66A; Drain Source Voltage Vds:500V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:700W Rohs Compliant: Yes \|Littelfuse IXFN80N50P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFN80N50P	Bulk			1	1 $39.09 10 $29.08 100 $27.34 1000 $26.75 10000 $26.75	Buy Now
	IXFN80N50P	Bulk			1	1 $49.00 10 $49.00 100 $49.00 1000 $49.00 10000 $49.00	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	10	1 - 10 $43.02 100 $43.02 1000 $43.02 10000 $43.02	Get Quote
IXYS Corporation IXFX80N50P MOSFETs 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXFX80N50P	Tube			300	1 - 10 - 100 - 1000 $17.52 10000 $17.52	Buy Now
TME	IXFX80N50P				1	1 $23.89 10 $19.97 100 $18.85 1000 $18.85 10000 $18.85	Get Quote

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80N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 ixfk 80n50p plus247	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80n50p o-264 plus247	PDF
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	isoplus247tm 80n50p 80n50 isoplus247 +24525 ge alize	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ixfn 80n50p e153432	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80n50p	PDF
80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80n50p 80n50 ixfn 80n50p	PDF
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	80n50p ixfk 80n50p 80n50 plus247	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	isoplus247tm 80n50p	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	80n50p	PDF
80N50P Abstract: ISOPLUS247 PLUS247 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	isoplus247tm 80n50p isoplus247 e153432 +2405b2 plus247	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80n50p ot-227 e153432 405b2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF

80N50P Search Results

80N50P Price and Stock

Littelfuse Inc IXFX80N50P

Littelfuse Inc IXFR80N50P

Littelfuse Inc IXFK80N50P

Littelfuse Inc IXFN80N50P

IXYS Corporation IXFX80N50P

80N50P Datasheets Context Search

80N50P

80n50

80N50P

80N50

80N50P

80N50P

7N60B equivalent

STW20N60