IGBT 40A Search Results

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

Contextual Info: APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT30DQ120

Abstract: SAC- 906
Contextual Info: APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE on = 2.5V Typical . Ultra Fast NPT - IGBT (B) ® The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior

Contextual Info: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60KR APT20GT60KR 600V 40A Thunderbolt IGBT™ TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT30GT60AR

Contextual Info: APT30GT60AR 600V 40A Thunderbolt IGBT™ TO-3 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT40GR120

Abstract: APT40GR120B2D30
Contextual Info: APT40GR120B2D30 APT40GR120B2D30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

apt40gr120b2scd10

Contextual Info: APT40GR120B2SCD10 APT40GR120B2SCD10 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT40GR120B2D30 APT40GR120B2D30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT20GT60BR ADVANCED P o w er Te c h n o l o g y 600V 40A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology theThunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: APT20GT60BR A dvanced P o w er Te c h n o l o g y 600V 40A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

IGBT 4000V

Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
Contextual Info: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of

836 DIODE current

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G050-060D TECHNICAL DATA DATA SHEET 836, REV. B Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 48V 200A

Contextual Info: SPM6G50-60 SENSITRON SEMICONDUCTOR TECHNICAL DATA Custom Power Hybrid Three-Phase IGBT BRIDGE, 600 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage

M5 DIODE 22-35

Abstract: diode chopper IGBT 600V 40A diode brake chopper brake DIODE Igbt 1200 igbt 1200V 40A module igbt 40A 600V M5 DIODE 6SI40N12
Contextual Info: 6SI40N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(80)oC ICRM TC= 80oC, tP =1ms Ptot VGES Diode Wechselrichter/ Diode Inverter

Contextual Info: IGBT SGF40N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching

sgf80n60uf

Contextual Info: IGBT SGF80N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching

Sensitron Semiconductor

Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT desaturation

Abstract: SPM6G060-120D IGBT 50 amp 1200 volt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IC53A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 500V 35A

Abstract: power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE